- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄353145 > GP400DDS18 (DYNEX SEMICONDUCTOR LTD) Dual Switch IGBT Module Preliminary Information PDF資料下載
參數(shù)資料
| 型號： | GP400DDS18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Dual Switch IGBT Module Preliminary Information |
| 中文描述： | 400 A, 1800 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 1/10頁 |
| 文件大小： | 100K |
| 代理商： | GP400DDS18 |
GP400DDS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
1/10
The GP400DDS12 is a dual switch 1200V, robust n
channel enhancement mode insulated gate bipolar
transistor (IGBT) module. Designed for low power loss, the
module is suitable for a variety of high voltage applications
in motor drives and power conversion. The high
impedance gate simplifies gate drive considerations
enabling operation directly from low power control
circuitry.
Fast switching times allow high frequency operation
making the device suitable for the latest drive designs
employing pwm and high frequency switching. The IGBT
has a wide reverse bias safe operating area (RBSOA) for
ultimate reliability in demanding applications.
These modules incorporate electrically isolated base
plates and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise earthed
heat sinks for safety.
The powerline range of high power modules includes
dual and single switch configurations with a range of
current and voltage capabilities to match customer system
demands.
Typical applications include dc motor drives, ac pwm
drives, main traction drives and auxiliaries, large ups
systems and resonant inverters.
FEATURES
s
n - Channel
s
Enhancement Mode
s
High Input Impedance
s
Optimised For High Power High Frequency Operation
s
Isolated Base
s
Full 1200V Capability
s
400A Per Arm
APPLICATIONS
s
High Power Switching
s
Motor Control
s
Inverters
s
Traction Systems
KEY PARAMETERS
V
CES
1200V
V
CE(sat)
(typ)
2.7V
I
C
(max)
400A
I
C(PK)
(max)
800A
Fig. 1 Electrical connections - (not to scale)
Fig.2 Dual switch circuit diagram
Outline type code: D
(See package details for further information)
ORDERING INFORMATION
Order As: GP400DDS12
Note: When ordering, please use the whole part number.
1
3
2
4
12
11
10
7
6
5
8
9
3(C
1)
4(E
2)
2(C
2)
12(C2)
7(C1)
11(G2)
10(E2)
5(E1)
6(G1)
1(E
1)
GP400DDS12
Powerline N-Channel Dual Switch IGBT Module
DS5341-1.1 February 2000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GP400LSS12 | Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 10uF; Voltage: 160V; Case Size: 18x20 mm; Packaging: Bulk |
| GP400LSS18 | Aluminum Electrolytic Radial Leaded Low Profile Wide Temp Capacitor; Capacitance: 47uF; Voltage: 160V; Case Size: 16x15 mm; Packaging: Bulk |
| GP400DDM12 | Dual Switch IGBT Module Advance Information |
| HDSP-B66Z-JJ000 | 32.9 mm (1.3 inch) General Purpose 5 x 8 Dot Matrix Alphanumeric Displays |
| HDSP-5721-0D000 | 14.2 mm (0.56 inch) Seven Segment Displays |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GP400LAHT2A1X | 制造商:GP BATTERIES 功能描述:BATTERY NIMH 4AH 2 CELL 制造商:GP BATTERIES 功能描述:BATTERY, NIMH, 4AH, 2 CELL 制造商:GP BATTERIES 功能描述:BATTERY, NIMH, 4AH, 2 CELL, Battery Size Code:-, Battery Capacity:4Ah, Battery Voltage:2.4V, Battery Technology:Nickel Metal Hydride, External Diameter:18mm, External Height:145mm, Weight:70g, Battery Terminals:Flat Top, Battery IEC , RoHS Compliant: NA |
| GP400LAHT3A1X | 制造商:GP BATTERIES 功能描述:BATTERY NIMH 4AH 3 CELL 制造商:GP BATTERIES 功能描述:BATTERY, NIMH, 4AH, 3 CELL 制造商:GP BATTERIES 功能描述:BATTERY, NIMH, 4AH, 3 CELL, Battery Size Code:-, Battery Capacity:4Ah, Battery Voltage:3.6V, Battery Technology:Nickel Metal Hydride, External Diameter:18mm, External Height:215mm, Weight:70g, Battery Terminals:Solder Tab, Battery , RoHS Compliant: NA |
| GP400LSS12 | 制造商:DYNEX 制造商全稱:Dynex Semiconductor 功能描述:Single Switch IGBT Module |
| GP400LSS12S | 制造商:n/a 功能描述:Power Module |
| GP400LSS16S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.6KV V(BR)CES | 440A I(C) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。