參數(shù)資料
型號: GP1S53VJ000F
廠商: Sharp Microelectronics
文件頁數(shù): 8/12頁
文件大小: 150K
描述: SENSOR OPTO SLOT 5MM TRANS THRU
產(chǎn)品變化通告: Internal Chip Change 04/May/2007
標準包裝: 100
檢測距離: 0.197"(5mm)
檢測方法: 可傳導的
輸出配置: 光電晶體管
電流 - DC 正向(If): 50mA
電流 - 集電極 (Ic)(最大): 20mA
電壓 - 集電極發(fā)射極擊穿(最大): 35V
響應時間: 3µs,4µs
安裝類型: 通孔
封裝/外殼: 4-DIP
包裝: 散裝
類型: 無放大
工作溫度: -25°C ~ 85°C
產(chǎn)品目錄頁面: 2776 (CN2011-ZH PDF)
其它名稱: 425-1972
425-1972-5
425-1972-5-ND
8
Sheet No.: D2-A02601EN
GP1S53VJ000F
?SPAN class="pst GP1S53VJ000F_2587086_4">Design Considerations
?/DIV>
Design guide
1) Prevention of detection error
To prevent photointerrupter from faulty operation caused by external light, do not set the detecting face to
the external light.
2) Position of opaque board
Opaque board shall be installed at place 4mm or more from the top of elements.
(Example)
This product is not designed against irradiation and incorporates non-coherent IRED.
?/DIV>
Degradation
In general, the emission of the IRED used in photocouplers will degrade over time.
In the case of long term operation, please take the general IRED degradation (50% degradation over 5
years) into the design consideration.
?/DIV>
Parts
This product is assembled using the below parts.
  " Photodetector (qty. : 1)
Category
Material
Maximum Sensitivity
wavelength (nm)
Sensitivity
wavelength (nm)
Response time (約)
Phototransistor   Silicon (Si)
800
400 to 1 200
3
  " Photo emitter (qty. : 1)
Category
Material
Maximum light emitting
wavelength (nm)
I/O Frequency (MHz)
Infrared emitting diode
(non-coherent)
Gallium arsenide (GaAs)
950
0.3
  " Material
Case
Lead frame plating
Black NORYL resin    Solder dip. (Sn3Ag0.5Cu)
4mm or more
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GP1S560 功能描述:PHOTOINTERRUPTER SLOT 2.0MM PCB RoHS:否 類別:傳感器,轉換器 >> 光學 - 光斷續(xù)器 - 槽型 - 晶體管輸出 系列:- 產(chǎn)品變化通告:Internal Chip Change 04/May/2007 標準包裝:100 系列:- 檢測距離:0.063"(1.6mm) 檢測方法:可傳導的 輸出配置:光電晶體管 電流 - DC 正向(If):50mA 電流 - 集電極 (Ic)(最大):20mA 電壓 - 集電極發(fā)射極擊穿(最大):35V 響應時間:35µs,35µs 安裝類型:通孔 封裝/外殼:PCB 安裝 包裝:管件 類型:無放大 工作溫度:-25°C ~ 85°C 其它名稱:425-1978-5