參數(shù)資料
型號: GP1S196HCZ0F
廠商: Sharp Microelectronics
文件頁數(shù): 8/11頁
文件大?。?/td> 161K
描述: SENSR OPTO SLOT 1.1MM TRANS THRU
標準包裝: 100
檢測距離: 0.043"(1.1mm)
檢測方法: 可傳導的
輸出配置: 光電晶體管
電流 - DC 正向(If): 30mA
電流 - 集電極 (Ic)(最大): 20mA
電壓 - 集電極發(fā)射極擊穿(最大): 35V
響應時間: 50µs,50µs
安裝類型: 通孔
封裝/外殼: PCB 安裝
包裝: 管件
類型: 無放大
工作溫度: -25°C ~ 85°C
其它名稱: 425-2509-5
8
Sheet No.: D3-A01001EN
GP1S196HCZ0F/GP1S196HCZSF
?SPAN class="pst GP1S196HCZ0F_2584553_4">Manufacturing Guidelines
?/DIV>
Storage and management after open (Only for GP1S196HCZSF)
Storage condition
Storage temp.: 5 to 30贑, Storage humidity : 70%RH or less at regular packaging.
Treatment after opening the moisture-proof package
After opening, you should mount the products while keeping them on the condition of 5 to 25贑 and 70%RH
or less in humidity within 4 days.
After opening the bag once even if the prolonged storage is necessary, you should mount the products within
two weeks.
And when you store the rest of products you should put into a DRY BOX. Otherwise after the rest of products
and silicagel are sealed up again, you should keep them under the condition of 5 to 30贑 and 70%RH or
less in humidity.
Baking before mounting
When the above-mentioned storage method could not be executed, please process the baking treatment
before mounting the products.
However the baking treatment is permitted within one time.
Recommended condition : 125贑, 16 to 24 hours

Do not process the baking treatment with the product wrapped. When the baking treatment processing, you
should move the products to a metallic tray or  x temporarily the products to substrate.
?/DIV>
Soldering Method
Re ow Soldering (Only for GP1S196HCZSF) :
Re ow soldering should follow the temperature pro le shown below.
Soldering should not exceed the curve of temperature pro le and time.
Please solder within one time.
MAX
240贑
MAX
160贑
200贑
25贑
1 to 4贑/s
MAX120s
MAX10s
MAX60s
MAX90s
1 to 4贑/s
1 to 4贑/s
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相關代理商/技術參數(shù)
參數(shù)描述
GP1S196HCZSF 功能描述:光學開關(透射型,光電晶體管輸出) Photointerrupter Sub mini 1.0mm gap RoHS:否 制造商:Omron Electronics 輸出設備:Phototransistor 槽寬:3.4 mm 光圈寬度:0.5 mm 集電極—發(fā)射極最大電壓 VCEO:30 V 最大集電極電流:20 mA 正向電流: 安裝風格:Through Hole 最大工作溫度:+ 85 C 最小工作溫度:- 25 C 封裝:
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