參數(shù)資料
型號(hào): GP1601FSS18
廠商: DYNEX SEMICONDUCTOR LTD
元件分類(lèi): 功率晶體管
英文描述: Single Switch Low VCE(SAT) IGBT Module
中文描述: 1600 A, 1800 V, N-CHANNEL IGBT
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 91K
代理商: GP1601FSS18
- 558 -
PIN 1
PIN 3
Positive CT
PIN 2
GP1601
THRU
GP1607
16.0 AMPS. Glass Passivated Rectifiers
Voltage Range
50 to 1000 Volts
Current
16.0 Amperes
TO-220
Features
Low forward voltage drop
High current capability
High reliability
High surge current capability
Mechanical Data
Cases: TO-220 molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Leads solderable per MIL-STD-
202, Method 208 guaranteed
Polarity: As marked
High temperature soldering guaranteed:
260
/10 seconds .16”,(4.06mm) from
case.
Weight: 2.24 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol GP
1601
50
35
50
GP
1602
100 200 400 600 800 1000
70
140 280 420 560 700
100 200 400 600 800 1000
GP
1603
GP
1604
GP
1605
GP
1606
GP
1607
Units
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
V
V
V
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
@T
C
= 100
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@8.0A
Maximum DC Reverse Current @ T
C
=25
at Rated DC Blocking Voltage @ T
C
=125
Typical Junction Capacitance ( Note 1)
Typical Thermal Resistance (Note 2)
Operating and Storage Temperature Range
T
J
,T
STG
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Thermal Resistance from Junction to Case Mounted on Heatsink size 2” x 3” x 0.25”
Al-Plate
I
(AV)
16.0
A
I
FSM
150
A
V
F
1.1
10
250
50
1.5
V
uA
uA
pF
/W
I
R
Cj
R
θ
JC
- 65 to + 150
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