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參數(shù)資料
| 型號： | GNOH |
| 廠商： | Electronics Industry Public Company Limited |
| 英文描述： | GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT |
| 中文描述： | 玻璃鈍化結(jié)硅表面貼裝 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 38K |
| 代理商： | GNOH |
GNOA - GNOM
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
PRV : 50 - 1000 Volts
Io : 1.5 Amperes
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
GNOA GNOB GNOD GNOE GNOG GNOH GNOJ GNOK GNOM UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
300
400
500
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
210
280
350
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
500
600
800
1000
V
Maximum Average Forward Current Ta = 75
°C
IF(AV)
1.5
A
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.5 Amps.
VF
1.1
V
Maximum DC Reverse Current
Ta = 25
°C
IR
5.0
A
at rated DC Blocking Voltage
Ta = 100
°C
IR(H)
50
A
Typical Junction Capacitance (Note1)
CJ
30
pF
Junction Temperature Range
TJ
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
Page 1 of 2
Rev. 01 : Mar 23, 2002
RATING
IFSM
50
A
2.0
± 0.2
2.1
± 0.2
SMA (DO-214AC)
1.2
± 0.2
5.0
±
0.15
4.5
±
0.15
2.6
± 0.15
Dimensions in millimeter
1.1
± 0.3
0.2
± 0.07
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