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參數(shù)資料
| 型號： | GN1M |
| 廠商： | Electronics Industry Public Company Limited |
| 英文描述： | GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT |
| 中文描述： | 玻璃鈍化結(jié)硅表面貼裝 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 16K |
| 代理商： | GN1M |
GN1A - GN13
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
PRV : 50 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.064 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
GN1A GN1B GN1D GN1G GN1J
GN1K GN1M GN13
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
1300
Volts
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
910
Volts
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
1300
Volts
Maximum Average Forward Current Ta = 75
°C IF(AV)
1.0
Amp.
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
IFSM
30
Amps.
Maximum Forward Voltage at IF = 1.0 Amp.
VF
1.0
Volts
Maximum DC Reverse Current
Ta = 25
°C
IR
5.0
A
at rated DC Blocking Voltage
Ta = 100
°C
IR(H)
50
A
Typical Junction Capacitance (Note1)
CJ
8
pF
Junction Temperature Range
TJ
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
UPDATE : MAY 27, 1998
RATING
2.1
± 0.2
SMA (DO-214AC)
1.2
± 0.2
5.0
±
0.15
4.5
±
0.15
2.6
± 0.15
Dimensions in millimeter
1.1
± 0.3
0.2
± 0.07
2.0
± 0.2
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