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參數(shù)資料
| 型號： | GMPSA13 |
| 廠商： | GTM CORPORATION |
| 英文描述： | NPN SILICON DARLINGTON TRANSISTOR |
| 中文描述： | NPN硅達(dá)林頓晶體管 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 167K |
| 代理商： | GMPSA13 |
CORPORATION
1/3
ISSUED DATE :2004/08/19
REVISED DATE :2004/11/29B
L
e 1
b
e
S E A T IN G
P L A N E
b 1
A
D
C
S 1
E
GM PSA13
N
N P
P N
N S
S II L
L II C
C O
O N
N D
D A
A R
R L
L II N
N G
G T
T O
O N
N T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA.
Features
*High D.C. Current Gain
*Complementary to GMPSA63
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.45
4.7
D
4.44
4.7
S1
1.02
-
E
3.30
3.81
b
0.36
0.51
L
12.70
-
b1
0.36
0.76
e1
1.150
1.390
C
0.36
0.51
e
2.42
2.66
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
Storage Temperature
Tstg
-55 ~ +150
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCES
30
V
Emitter to Base Voltage
VEBO
10
V
Collector Current
IC
500
mA
Total Power Dissipation
PD
625
mW
Characteristics at Ta = 25 ::::
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
30
-
V
IC=100uA ,IE=0
BVCES
30
-
V
IC=100uA ,VBE=0
BVEBO
10
-
V
IE=10uA ,IC=0
ICBO
-
100
nA
VCB=30V, IE = 0
IEBO
-
100
nA
VEB=10V, Ic = 0
*VCE(sat)1
-
1.5
V
IC=100mA, IB=0.1mA
*VCE(sat)2
-
1.0
-
V
IC=500mA, IB=0.5mA
*hFE1
5
-
K
VCE=5V, IC=10mA
*hFE2
10
-
K
VCE=5V, IC=100mA
*hFE3
-
50
-
K
VCE=5V, IC=500mA
fT
125
-
MHz
VCE=5V, IC=10mA, f=100MHz
Cob
-
6
pF
VCB=10V, IE = 0,f=1MHz
Pulse Test: Pulse Width 380us, Duty Cycle
%
TO-92
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| GMPSA14 | 制造商:GTM 制造商全稱:GTM 功能描述:NPN SILICON DARLINGTON TRANSISTOR |
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| GMPSA42 | 制造商:GTM 制造商全稱:GTM 功能描述:PNP EPITAXIAL PLANAR TRANSISTOR |
| GMPSA44 | 制造商:GTM 制造商全稱:GTM 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
| GMPSA44S | 制造商:GTM 制造商全稱:GTM 功能描述:NPN EPITAXIAL PLANAR TRANSISTOR |
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