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參數(shù)資料
| 型號： | GMM77332280CNTG |
| 英文描述： | 32Mx72|3.3V|5/6|x36|FP/EDO DRAM - 256MB Buffered DIMM |
| 中文描述： | 32Mx72 | 3.3 | 5 / 6 | x36 |計劃生育/ EDO公司的DRAM - 256MB的緩沖DIMM |
| 文件頁數(shù)： | 4/27頁 |
| 文件大?。?/td> | 401K |
| 代理商： | GMM77332280CNTG |
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LG Semicon
GMM77316380CTG-5/6
4
DC Electrical Characteristics:
(V
CC
= 3.3V+/-0.3V, T
A
= 0 ~ 70C)
Note: 1. I
CC
depends on output load condition when the device is selected. I
CC(max)
is specified at the
output open condition.
2. Address can be changed once or less while RAS = V
IL
.
3. Address can be changed once or less while CAS = V
IH
.
Unit
Note
V
V
uA
uA
§ ì
§ ì
§ ì
§ ì
§ ì
§ ì
§ ì
1,2
1,3
2
1
Symbol
Parameter
V
OH
V
OL
Output Level
Output ``H`` Level Voltage (I
OUT
= -2
§ ì
)
Output Level
Output ``L`` Level Voltage (I
OUT
= 2
§ ì
)
I
CC1
Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling:
t
RC
=
t
RC
min)
I
CC2
Standby Current (TTL)
Power Supply Standby Current
(RAS, CAS = V
IH
, D
OUT
= High-Z)
I
CC3
RAS-Only Refresh Current
Average Power Supply Current
RAS-Only Refresh Mode
(RAS Cycling, CAS = V
IH
, t
RC
= t
RC
min)
I
CC4
Extended Data Out Mode Current
Average Power Supply Current
Extended Data Out Mode
(RAS = V
IL
, CAS, Address Cycling:
t
PC
=
t
PC
min
)
I
CC5
Standby Current (CMOS)
Power Supply Standby Current
(RAS, CAS>=V
CC
-0.2V, D
OUT
= High-Z)
I
CC6
CAS-before-RAS Refresh Current
(t
RC
= t
RC
min)
I
CC7
Standby Current
I
I(L)
I
O(L)
Input Leakage Current, Any Input
(0V V
IN
Vcc)
Output Leakage Current
(D
OUT
is Disabled, 0V V
OUT
Vcc)
RAS = V
IH
CAS = V
IL
D
OUT
= Enable
GMM77316380CTG
Min
Max
50ns
60ns
2.4
0
-
-
-
-
-
-
-
-
-
-
-
-5
-5
50ns
60ns
50ns
60ns
50ns
60ns
Vcc
0.4
2540
2360
2540
2360
2540
2360
56
2000
1820
29
110
5
5
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| GMM77332380CNTG | 32Mx72|3.3V|5/6|x36|FP/EDO DRAM - 256MB Buffered DIMM |
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