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參數(shù)資料
| 型號(hào)： | GMCR100 |
| 廠商： | GTM CORPORATION |
| 英文描述： | SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 0.8A, 400V |
| 中文描述： | 敏感柵硅控整流器反向阻斷晶閘管0.8A分別為400V |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 217K |
| 代理商： | GMCR100 |
GMCR100-6
Page: 1/3
ISSUED DATE :2005/09/28
REVISED DATE :2006/03/29B
G
G M
M C
C R
R 110000--66
S E N S I T I V E G AT E S I L I C O N C O NT R O L L ED R E C T I F I E R S
R E V E R S E B L O C K I N G T H Y R I S T O R S 0 . 8 A , 4 0 0 V
Description
The GMCR100-6 PNPN device is designed for high volume, line-powered applications such as relay and lamp
drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO-92 package which is readily adaptable for use in automatic insertion
equipment.
Features
&Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits
&
On-state Current Rating of 0.8A RMS at 80 :
&
High Surge Current Capability 10A
&
Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design
&
Immunity to dV/dt - 20 V/ sec Minimum at 110 :
&
Glass-Passivated Surface for Reliability and Uniformity
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
4.45
4.7
D
4.44
4.7
S1
1.02
-
E
3.30
3.81
b
0.36
0.51
L
12.70
-
b1
0.36
0.76
e1
1.150
1.390
C
0.36
0.51
e
2.42
2.66
Absolute Maximum Ratings (TJ=25 : unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off-State Voltage(Note1)
(TJ=-40 to 110 : , Sine Wave, 50 to 60Hz; Gate open)
VDRM
VRRM
400
V
On-state RMS Current, (TC=80 : ) 180 HConduction Angles
IT(RMS)
0.8
A
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60Hz, TJ=25 : )
ITSM
10
A
Circuit Fusing Consideration (t=8.3ms)
I2t
0.415
A2S
Forward Peak Gate Power (TA=25 : , Pulse Width 1.0 s)
PGM
100
mW
Forward Average Gate Power (TA=25 : , t=8.3ms)
PG(AV)
10
mW
Forward Peak Gate Current (TA=25 : , Pulse Width 1.0 s)
IGM
1.0
A
Reverse Peak Gate Voltage (TA=25 : , Pulse Width 1.0 s)
VGRM
5.0
V
Operating Junction Temperature Rang @ Rate VRRM and VDRM
TJ
-40 ~ +110
:
Storage Temperature Rage
Tstg
-40 ~ +150
:
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress
limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device function operation is
not implied, damage may occur and reliability may be affected.
Note 1.
VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage:
however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall
not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
L
e 1
b
e
S E A T IN G
P L A N E
b 1
A
D
C
S 1
E
TO-92
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