參數(shù)資料
型號(hào): GMBTA44
廠商: GTM CORPORATION
英文描述: NPN EPITAXIAL PLANAR TRANSISTOR
中文描述: 瑞展晶體管
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 184K
代理商: GMBTA44
GMBTA44
1/2
ISSUED DATE :2001/10/04
REVISED DATE :2006/10/13C
G
G M
M B
B T
TA
A4444
N
N P
P N
N E
E P
P II T
T A
A X
X II A
A L
L P
P L
L A
A N
N A
A R
R T
T R
R A
A N
N S
S II S
S T
T O
O R
R
Description
The GMBTA44 is designed for application requires high voltage.
Package Dimensions
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
1.90 REF.
B
2.40
2.80
H
1.00
1.30
C
1.40
1.60
K
0.10
0.20
D
0.35
0.50
J
0.40
-
E
0
0.10
L
0.85
1.15
F
0.45
0.55
M
0 C
10 C
Absolute Maximum Ratings at Ta = 25 ::::
Parameter
Symbol
Ratings
Unit
Junction Temperature
Tj
+150
:
Storage Temperature
Tstg
-55~+150
:
Collector to Base Voltage
VCBO
500
V
Collector to Emitter Voltage
VCEO
400
V
Emitter to Base Voltage
VEBO
6
V
Collector Current
IC
300
mA
Total Power Dissipation
PD
350
mW
Electrical Characteristics (Ta = 25 ,
: unless otherwise noted)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
500
-
V
IC=100uA, IE=0
BVCEO
400
-
V
IC=1mA, IB=0
BVEBO
6
-
V
IE=10uA, IC=0
ICBO
-
100
nA
VCB=400V, IE=0
IEBO
-
100
nA
VEB=4V, IC=0
ICES
-
500
nA
VCE=400V
VCE(sat)1
-
375
mV
IC=20mA, IB=2mA
VCE(sat)2
-
750
mV
IC=50mA, IB=5mA
VBE(sat)
-
750
mV
IC=10mA, IB=1mA
hFE1
40
-
VCE=10V, IC=1mA
hFE2
40
-
300
VCE=10V, IC=10mA
hFE3
45
-
VCE=10V, IC=50mA
hFE4
20
-
VCE=10V, IC=100mA
Cob
-
4
6
pF
VCB=20V, f=1MHz
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