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參數(shù)資料
| 型號(hào)： | GM76U256CLFW-12/E |
| 廠商： | HYNIX SEMICONDUCTOR INC |
| 元件分類： | SRAM |
| 英文描述： | 32K X 8 STANDARD SRAM, 120 ns, PDSO28 |
| 封裝： | SOP-28 |
| 文件頁數(shù)： | 8/9頁 |
| 文件大小： | 77K |
| 代理商： | GM76U256CLFW-12/E |
GM76U256CL/LL
Note: When retaining data in standby mode, supply voltage can be lowered within a certain range.
Read or write cycle cannot be performed while the supply voltage is low.
Symbol
Parameter
Unit
CIN
COUT
Input Capacitance
Output Capacitance
pF
Max
6
8
Min
Test Conditions
-
*Note: This parameter is sampled and not 100% tested.
60
Data Retention Timing
Notes:
1. Typ, Values are measured at 25C
2. Read Cycle Time
tCDR
Chip Select to Data Retention Time
ns
-
0
tR
Operation Recovery Time
ns
-
Refer to the figure
below
ICCR
Data Retention
Current
uA
-
VCC = 3.0V
/CS > 2.8V
15
*1
20
1
-
*1
Data Retention Characteristics (TA = -25 ~ 85C)
Symbol
Parameter
Unit
VCCR
Data Retention Supply Voltage
V
Max
3.3
7
Typ
-
Min
0.5
2.0
-
10
Test Conditions
/CS > VCCR - 0.2V
*1
0.5
1
Data Retention Mode
GND
tCDR
VCC
/CS
2.7V
2.2V
VCCR
tR
/CS
VCCR - 0.2V
>
0 to +70C (LL)
-25 to +85C (LLE)
-25 to +85C (LE)
0 to +70C (L)
Capacitance (f = 1MHZ, TA = 25C)
VI = 0V
VO = 0V
tRC *2
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| GM76U256CLFW-85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SRAM |
| GM76U256CLL | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:32K x8 bit 3.0V Low Power CMOS slow SRAM |
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