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參數(shù)資料
| 型號： | GM72V66841ET-8 |
| 英文描述： | x8 SDRAM |
| 中文描述： | x8 SDRAM內(nèi)存 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 81K |
| 代理商： | GM72V66841ET-8 |
GM72V66441ET/ELT
Rev. 1.1/Apr.01
AC Characteristics
(Ta = 0 to 70 , V
CC
, V
CCQ
= 3.3 V
(Continued)
0.3 V, V
SS
, V
SSQ
= 0 V)
Notes :1. AC measurement assumes
t
T
= 1ns. Reference level for timing of input signals is 1.40V.
If
t
T
is longer than 1ns,transition time compensation should be considered.
2. Access time is measured at 1.40V. Load condition is C
L
= 50pF without termination.
3.
t
LZ
(min)defines the time at which the outputs achieves the low impedance state.
4.
t
HZ
(max)defines the time at which the outputs achieves the high impedance state.
5.
t
CES
define CKE setup time to CKE rising edge except Power down exit command.
Test Condition
Input and output-timing reference levels: 1.4V
Input waveform and output load: See following figures
20%
t
T
t
T
0.4V
2.4V
I/O
80%
OPEN
input
C
L
Symbol
Notes
Parameter
1
t
RRD
1
Active (a) to Active (b)
command period
Refresh period
t
REF
t
RWL
Write recovery or data-in
to precharge lead time
Unit
ns
ns
ms
- 8
Min Max
8
-
16
-
-
64
- 7K
Min Max
10
-
20
-
-
64
- 7J
Min Max
10
-
20
-
-
64
- 75
Min Max
7.5
-
15
-
-
64
- 7
Min Max
7
-
14
-
-
64
-7-
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