參數(shù)資料
型號(hào)： GLT5640L32-7
廠商： Electronic Theatre Controls, Inc.
英文描述： 12 AMP MINIATURE POWER RELAY
中文描述： 200萬的CMOS同步DRAM × 32內(nèi)存
文件頁數(shù)： 11/72頁
文件大小： 2315K
代理商： GLT5640L32-7
G-LINK
GLT5640AL16
4M X 16 CMOS Synchronous Dynamic RAM
Feb 2004 (Rev.0.1)
G-Link Technology Corporation, Taiwan
Web : www.glink.com.tw Email : sales@glink.com.tw
TEL : 886-2-27968078
- 11 -
2.4 Operative Command Table (note 1)
Current state
CS
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
H
L
L
L
L
L
L
L
L
H
RAS
X
H
H
H
L
L
L
L
X
H
H
H
L
L
L
L
X
H
H
H
H
L
L
L
L
X
CAS
X
H
L
L
H
H
L
L
X
H
L
L
H
H
L
L
X
H
H
L
L
H
H
L
L
X
WE
X
X
H
L
H
L
H
L
X
X
H
L
H
L
H
L
X
H
L
H
L
H
L
H
L
X
Address
Command
Action
Notes
X
X
BA, CA, A10
BA, CA, A10
BR, RA
BA, A10
X
Op-Code
X
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op-Code
X
X
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op-Code
X
DESL
NOP or BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MPS
DESL
NOP or BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
NOP
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
DESL
Nop or Power down
Nop or Power down
ILLEGAL
ILLEGAL
Row active
Nop
Refresh or Self refresh
Mode register access
Nop
Nop
Begin read : Determine AP
Begin write : Determine AP
ILLEGAL
Precharge
ILLEGAL
ILLEGAL
Continue burst to end
→
Row active
Continue burst to end
→
Row active
Burst stop
→
Row active
Term burst, new read : Determine AP
Term burst, start write : Determine AP
ILLEGAL
Term burst, precharging
ILLEGAL
ILLEGAL
Continue burst to end
→
write
recovering
Continue burst to end
→
write
recovering
Burst stop
→
Row active
Term burst, start read : Determine AP
Term burst, new write : Determine AP
ILLEGAL
Term burst, precharging
ILLEGAL
ILLEGAL
2
2
3
3
4
Idle
5
5
3
6
Row active
7
7,8
3
Read
L
H
H
H
X
NOP
L
L
L
L
L
L
L
H
H
H
L
L
L
L
H
L
L
H
H
L
L
L
H
L
H
L
H
L
X
BA, CA, A10
BA, CA, A10
BA, RA
BA, A10
X
Op-Code
BST
READ/READA
WRIT/WRITA
ACT
PRE/PALL
REF/SELF
MRS
7,8
7
3
9
write
相關(guān)PDF資料
PDF描述
GLT5640L32-8 CMOS Synchronous DRAM 2M x 32 SDRAM
GLT625608 Time-Delay Relay; Contacts:DPDT; Time Range:10 to 100s; Mounting Type:Panel; Timing Function:Delay-On-Dropout; Contact Carrying Power:2VA
GLT625608-10FB 32K x 8 SLOW SPEED CMOS STATIC RAM
GLT625608-10J3 Time-Delay Relay; Contacts:SPST-NO; Time Range:1 to 100 min.; Timing Function:Delay-On-Make; Contact Carry Current:1A; Relay Terminals:Quick Connect; Supply Voltage:120VAC
GLT625608-10TC 32K x 8 SLOW SPEED CMOS STATIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GLT5640L32-8 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CMOS Synchronous DRAM 2M x 32 SDRAM
GLT62 功能描述:線性和開關(guān)式電源 60W Three channel 5V/12V/-12V RoHS:否 制造商:TDK-Lambda 產(chǎn)品:Switching Supplies 開放式框架/封閉式:Enclosed 輸出功率額定值:800 W 輸入電壓:85 VAC to 265 VAC 輸出端數(shù)量:1 輸出電壓（通道 1）:20 V 輸出電流（通道 1）:40 A 商用/醫(yī)用: 輸出電壓（通道 2）: 輸出電流（通道 2）: 安裝風(fēng)格:Rack 長(zhǎng)度: 寬度: 高度:
GLT625608 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32K x 8 SLOW SPEED CMOS STATIC RAM
GLT625608-10FB 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32K x 8 SLOW SPEED CMOS STATIC RAM
GLT625608-10J3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:32K x 8 SLOW SPEED CMOS STATIC RAM
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