- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383008 > GLT5640AL16P-6TC (Electronic Theatre Controls, Inc.) TUBE, SHR, POL, 063/031, BLK, 017, 600V, 135C, (934872) PDF資料下載
參數(shù)資料
| 型號： | GLT5640AL16P-6TC |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | TUBE, SHR, POL, 063/031, BLK, 017, 600V, 135C, (934872) |
| 中文描述： | 4米× 16個(gè)CMOS同步動態(tài)隨機(jī)存儲器 |
| 文件頁數(shù)： | 20/72頁 |
| 文件大小： | 2315K |
| 代理商： | GLT5640AL16P-6TC |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁當(dāng)前第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁
G-LINK
GLT5640AL16
4M X 16 CMOS Synchronous Dynamic RAM
Feb 2004 (Rev.0.1)
G-Link Technology Corporation, Taiwan
Web : www.glink.com.tw Email : sales@glink.com.tw
TEL : 886-2-27968078
- 20 -
8.Auto Precharge
During a read or write command cycle, A10 controls whether auto precharge is selected. If A10 is high in the read or write
command (Read with Auto precharge command or Write with Auto precharge command), auto precharge is selected and begins
automatically.
In the write cycle, t
DAL
(min.) must be satisfied before asserting the next activate command to the bank being precharged.
When using auto precharge in the read cycle, knowing when the precharge starts is important because the next activate command
to the bank being precharged cannot be executed until the precharge cycle ends. Once auto precharge has started, an activate
command to the bank can be asserted after t
RP
has been satisfied.
A Read or Write command without auto - precharge can be terminated in the midst of a burst operation. However, a Read or
Write command with auto - precharge can not be interrupted by the same bank commands before the entire burst operation is
completed. Therefore use of the same bank Read, Write, Precharge or Burst Stop command is prohibited during a read or write
cycle with auto - precharge. It should be noted that the device will not respond to the Auto - Precharge command if the device is
programmed for full page burst read or write cycles.
The timing when the auto precharge cycle begins depends both on both the
CAS
Iatency programmed into the mode register
and whether the cycle is read or write.
8.1 Read with Auto Precharge
During a READA cycle, the auto precharge begins one clock earlier (CL = 2) or two clocks earlier (CL = 3) than the last word
output.
READ with AUTO PRECHARGE
Burst lengh = 4
CLK
Command
CAS latency = 2
DQ
Command
CAS latency = 3
DQ
Remark READA means READ with AUTO PRECHARGE
H - Z
Auto precharge starts
QB0
QB3
QB2
QB1
READA B
READA B
T0
T1
T2
T3
T4
T5
T6
T7
Auto precharge starts
Hi - Z
T8
QB0
QB3
QB2
QB1
No New Command to Bank B
No New Command to Bank B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GLT5640AL16P-7TC | SHRINK TUBING D=12 |
| GLT5640AL16P-8TC | INSULATION SLEEVING, 1/4" ID, PER MIL-I-23053 |
| GLT5640L32 | CMOS Synchronous DRAM 2M x 32 SDRAM |
| GLT5640L32-10 | CMOS Synchronous DRAM 2M x 32 SDRAM |
| GLT5640L32-5 | CMOS Synchronous DRAM 2M x 32 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GLT5640AL16P-7TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 16 CMOS Synchronous Dynamic RAM |
| GLT5640AL16P-8TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 16 CMOS Synchronous Dynamic RAM |
| GLT5640L32 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CMOS Synchronous DRAM 2M x 32 SDRAM |
| GLT5640L32-10 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CMOS Synchronous DRAM 2M x 32 SDRAM |
| GLT5640L32-5 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:CMOS Synchronous DRAM 2M x 32 SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。