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參數(shù)資料
| 型號： | GLT5640AL16L-7TC |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | SHRINK TUBING, .093X..046IDX.020, BLK |
| 中文描述： | 4米× 16個CMOS同步動態(tài)隨機(jī)存儲器 |
| 文件頁數(shù)： | 20/72頁 |
| 文件大?。?/td> | 2315K |
| 代理商： | GLT5640AL16L-7TC |
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G-LINK
GLT5640AL16
4M X 16 CMOS Synchronous Dynamic RAM
Feb 2004 (Rev.0.1)
G-Link Technology Corporation, Taiwan
Web : www.glink.com.tw Email : sales@glink.com.tw
TEL : 886-2-27968078
- 20 -
8.Auto Precharge
During a read or write command cycle, A10 controls whether auto precharge is selected. If A10 is high in the read or write
command (Read with Auto precharge command or Write with Auto precharge command), auto precharge is selected and begins
automatically.
In the write cycle, t
DAL
(min.) must be satisfied before asserting the next activate command to the bank being precharged.
When using auto precharge in the read cycle, knowing when the precharge starts is important because the next activate command
to the bank being precharged cannot be executed until the precharge cycle ends. Once auto precharge has started, an activate
command to the bank can be asserted after t
RP
has been satisfied.
A Read or Write command without auto - precharge can be terminated in the midst of a burst operation. However, a Read or
Write command with auto - precharge can not be interrupted by the same bank commands before the entire burst operation is
completed. Therefore use of the same bank Read, Write, Precharge or Burst Stop command is prohibited during a read or write
cycle with auto - precharge. It should be noted that the device will not respond to the Auto - Precharge command if the device is
programmed for full page burst read or write cycles.
The timing when the auto precharge cycle begins depends both on both the
CAS
Iatency programmed into the mode register
and whether the cycle is read or write.
8.1 Read with Auto Precharge
During a READA cycle, the auto precharge begins one clock earlier (CL = 2) or two clocks earlier (CL = 3) than the last word
output.
READ with AUTO PRECHARGE
Burst lengh = 4
CLK
Command
CAS latency = 2
DQ
Command
CAS latency = 3
DQ
Remark READA means READ with AUTO PRECHARGE
H - Z
Auto precharge starts
QB0
QB3
QB2
QB1
READA B
READA B
T0
T1
T2
T3
T4
T5
T6
T7
Auto precharge starts
Hi - Z
T8
QB0
QB3
QB2
QB1
No New Command to Bank B
No New Command to Bank B
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GLT5640AL16L-8TC | HEAT SHRINK TUBING, 2.4MM POLYOLEFIN, BLACK |
| GLT5640AL16P-10TC | TUBING SHRINK BLK IRRAD-PFIN 1/16 ID |
| GLT5640AL16P-5.5TC | TBG H/SHRINK FP 1/16 BLK |
| GLT5640AL16P-6TC | TUBE, SHR, POL, 063/031, BLK, 017, 600V, 135C, (934872) |
| GLT5640AL16P-7TC | SHRINK TUBING D=12 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GLT5640AL16L-8TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 16 CMOS Synchronous Dynamic RAM |
| GLT5640AL16P-10TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 16 CMOS Synchronous Dynamic RAM |
| GLT5640AL16P-5.5TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 16 CMOS Synchronous Dynamic RAM |
| GLT5640AL16P-6TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 16 CMOS Synchronous Dynamic RAM |
| GLT5640AL16P-7TC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:4M X 16 CMOS Synchronous Dynamic RAM |
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