參數(shù)資料
型號: GLT4160L04-50TC
廠商: Electronic Theatre Controls, Inc.
英文描述: 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
中文描述: 4米× 4 CMOS動態(tài)RAM的擴展數(shù)據(jù)輸出
文件頁數(shù): 1/22頁
文件大?。?/td> 588K
代理商: GLT4160L04-50TC
G-LINK
GLT4160L04
4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT
May 2001 (Rev.3.1)
G-Link Technology
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F, No. 24-2, Industry E. RD, IV, Science Based
Industrial Park, Hsin Chu, Taiwan.
- 1 -
Features :
Description :
4,194,304 words by 4 bits organization.
Fast access time and cycle time
Low power dissipation.
Read-Modify-Write,
RAS
-Only Refresh,
CAS
-Before-
RAS
Refresh, Hidden Refresh.
2,048 refresh cycles per 32ms.
Available in 300 mil 26(24) SOJ and TSOPII.
3.3V
±
0.3V Vcc Power Supply voltage
.
All inputs and Outputs are LVTTL compatible.
Extended Data-Out (EDO) Page access
cycle.
Self-refresh Capability
. (S-Version).
The GLT4160L04 is a high-performance
CMOS dynamic random access memory
containing 16,777,216 bits organized in a x4
configuration. The GLT4160L04 offers page
cycle access with Extended Data Output.
The GLT4160L04 has 11 row- and 11
column-addresses, and accepts 2048-cycle
refresh in 32 ms.
The GLT4160L04 provides EDO PAGE
MODE operation which allows for fast data
access
within
a
boundary, up to 2048 x 4 bits with cycle
times as short as 18ns.
row-address
defined
HIGH PERFORMANCE
40
50
60
70
Max.
RAS
Access Time, (t
RAC
)
40 ns
50 ns
60 ns
70 ns
Max. Column Address Access Time, (t
AA
)
20 ns
25 ns
30 ns
35 ns
Min. Extended Data Out Page Mode Cycle Time, (t
PC
)
18 ns
20 ns
25 ns
30 ns
Min. Read/Write Cycle Time, (t
RC
)
70 ns
84 ns
104 ns 124 ns
Max.
CAS
Access Time (t
CAC
)
12 ns
13 ns
15 ns
20 ns
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