參數(shù)資料
型號: GL4800
廠商: Sharp Corporation
元件分類: 發(fā)光二極管
英文描述: Thin Type Infrared Emitting Diode
中文描述: 薄型紅外發(fā)光二極管
文件頁數(shù): 1/3頁
文件大小: 33K
代理商: GL4800
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
GL4800
I
Features
1. Thin type (Thickness : 1.5mm)
2. Beam angle (
θ:
TYP. ± 30)
3. Radiant flux
(
Φ
e
: MIN. 0.7mW at I
F
= 20mA)
4. Epoxy resin package
I
Applications
1. Floppy disk drives
2. Optoelectronic switches
*1 Pulse width<=100
μ
s, Duty ratio= 0.01
*2 For 3 seconds at the position of 1.8mm from the surface of resin edge.
Parameter
Symbol
P
I
F
I
FM
V
R
T
opr
T
stg
T
sol
Rating
75
50
1
6
- 25 to + 85
- 40 to + 85
260
Unit
mW
mA
A
V
C
C
C
Power dissipation
Forward current
*1
Peak forward current
Reverse voltage
Operating temperature
Storage temperature
*2
Soldering temperature
GL4800
1.6
0
1
1
0
1
M
2.54
0.8
0.7
2
-
C0.5
I
Outline Dimensions
(Unit : mm )
(Ta= 25C)
I
Absolute Maximum Ratings
0.25
1
2
2
1
P
Parameter
Conditions
I
F
= 20mA
I
FM
= 0.5A
V
R
= 3V
V
R
= 0, f= 1MHz
MIN.
-
-
-
-
-
0.7
-
-
TYP.
1.2
3.0
-
70
300
1.6
950
45
MAX.
1.4
4.0
10
-
-
3.0
-
-
Unit
V
V
μ
A
pF
kHz
mW
nm
nm
Forward voltage
Peak forward voltage
Reverse current
Terminal capacitance
Frequency response
Radiant flux
Peak emission wavelength
Half intensity wavelength
-
I
Electro-optical Characteristics
(Ta= 25C)
I
F
= 20mA
I
F
= 5mA
I
F
= 5mA
Symbol
V
F
V
FM
I
R
C
t
f
c
Φ
e
λ
p
λ
R
Pink transparent
epoxy resin
1 Anode
2 Cathode
Diode
Thin Type Infrared Emitting
φ
0.8
3.0
±
0.2
1.5
±
0.2
3
±
1
±
2
-
0.45
2
-
0.9
0
M
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