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參數(shù)資料
| 型號： | GI01N60 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 中文描述： | N溝道增強型功率MOSFET |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 300K |
| 代理商： | GI01N60 |
G
I
01N60 Page: 1/5
ISSUED DATE :2004/06/01
REVISED DATE :2005/01/28B
G
G
I
I
0
0
1
1
N
N
6
6
0
0
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
The G
I
01N60 provide the designer with the best combination of fast switching.
The through-hole version (TO-251) is available for low-profile applications and suited for AC/DC converters.
Features
*Dynamic dv/dt Rating
*Simple Drive Requirement
*Repetitive Avalanche Rated
*Fast Switching
Package Dimensions
Millimeter
Min.
6.40
5.20
6.80
7.20
2.30 REF.
0.60
Millimeter
Min.
0.50
2.20
0.45
0.45
0.90
5.40
REF.
Max.
6.80
5.50
7.20
7.80
REF.
Max.
0.70
2.40
0.55
0.60
1.50
5.80
A
B
C
D
E
F
G
H
J
K
L
M
0.90
Absolute Maximum Ratings
Parameter
Symbol
V
DS
V
GS
I
D
@T
C
=25
к
I
D
@T
C
=100
к
I
DM
P
D
@T
C
=25
к
E
AS
I
AR
E
AR
Tj, Tstg
Ratings
600
f
20
1.6
1
6
39
0.31
13
1.6
0.5
-55 ~ +150
Unit
V
V
A
A
A
W
W/
mJ
A
mJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
, V
GS
@10V
Continuous Drain Current
, V
GS
@10V
Pulsed Drain Current
1,
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
2
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Thermal Resistance Junction-case
Max.
Thermal Resistance Junction-ambient Max.
Symbol
Rthj-c
Rthj-a
Value
3.2
110
Unit
/W
/W
BV
DSS
600V
R
DS(ON)
8
I
D
1.6A
TO-251
Pb Free Plating Product
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