參數(shù)資料
型號(hào)： GH5R41MA3C
英文描述： HOLOGRAM LASER
中文描述： 激光全息圖
文件頁(yè)數(shù)： 4/7頁(yè)
文件大?。?/td> 168K
代理商： GH5R41MA3C
123
Hologram Lasers
GH5R41KA3C
Parameter
Symbol
x
y
z
R
r
MAX.
+80
+80
+80
-
Unit
μ
m
μ
m
μ
m
%
Conditions
MIN.
-80
-80
-80
85
TYP.
-
-
-
-
■
Optical Characteristics of Hologram Device (Design Standard*)
Parameter
Symbol
Hologram diffraction
efficiency
Hologram diffraction
angle
Except D1, D2
(T
C
=25
C)
Unit
%
%
MAX.
-
(8.5)
-
-
-
-
-
-
12.4
-
Conditions
MIN.
(79)
(5.5)
-
TYP.
(83)
(6.9)
20.7
-
26.3
9
2.72
Grating diffraction efficiency
Grating diffraction angle
Electro-optical Characteristics of Laser Diode (Design Standard*)
6.7
-
0:1
λ
=780nm
-
-
-
λ
=780nm
λ
=780nm
0 th
±1st
D1, D2
■
(T
C
=25
C)
Misalignment position
3
Reflectivity of LD rear facet
■
Electro-optical Characteristics of OPIC for Signal Detection (Design Standard*)
Parameter
Symbol
Supply voltage
V
CC
Reference voltage
V
ref
Output terminal current
Io
Common to high/low gain
(T
C
=25
C, V
CC
=5V, V
ref
=2.1V)
Unit
MAX.
5.5
V
2.21
V
0.3
mA
3
4
Sampling rate is 1pc./reflection membrane formation process lot
Appricable divisions correspond to output terminals.
A : V
A
, V
B
, V
C
, V
D
B : V
+
G
, V
F
+
H
Difference from V
Light source is a laser diode of
λ
=780nm.
* These parameters are not guaranteed performance, but general specifications of each optical element which makes up a hologram laser.
Please refer to the chapter "Handling Precautions"
5
6
7
8
-3dB level (0dB level is taken for output level when f=0.1MHz)
10μW of DC light is applied to the center of each photodiode, and 4μW
of AC light is irradiated. BW=10kHz
5k
of resistor and 10pF of capacitor should be connected in parallel
between output terminal and Vref terminal.
9
4
Segment
Conditions
MIN.
4.5
2.00
-0.03
TYP.
5
2.1
0.01
Reference voltage terminal current
I
ref
f
cm
f
cs
Common to high/low gain, No light
Main amp, Common to high/low gain, -3dB
Sub amp, Common to high/low gain, -3dB
Common to high/low gain
f=0.1 to 45MHz
Hign gain, 50
end
BW=30kHz, f=36MHz
Main amp, Hign gain
Main amp, Low gain
Sub amp, Hign gain
Sub amp, Low gain
Common to high/low gain
Common to high/low gain, No light
Main amp, Hign gain, No light
Main amp, Low gain, No light
Sub amp, Hign gain, No light
Sub amp, Low gain, No light
Between main-sub amp, Hign gain, No light
Between main-sub amp, Low gain, No light
Common to high/low gain, Integral value of the first
-0.5
45
1
1
2
-
-
mA
MHz
MHz
6,7,8,9
Response frequency
60
2
A
B
5,6,8,9
Peaking level
V
pk
2
-
-
3
dB
A
9
Noise level
f
nm
-
-74
-68
dBm
A
Sensitivity 1
Sensitivity 2
Sensitivity 3
Sensitivity 4
Thermal drift of sensitivity
Thermal drift of offset voltage
Thermal drift of offset voltage 1
Thermal drift of offset voltage 2
Thermal drift of offset voltage 3
Thermal drift of offset voltage 4
Thermal drift of offset voltage 5
Thermal drift of offset voltage 6
Over/undershoot at gain
switching
Stabilization time at gain switching
R
m
1
R
m
2
R
m
3
R
m
4
R
sm
/T
V
od
/T
V
os
1/T
V
os
2/T
V
os
3/T
V
os
4/T
V
os
5/T
V
os
6/T
18
0.72
72
2.88
-
-
-
-
-
-
-
-
24
0.96
96
3.84
4 200
300
30
15
30
15
100
45
30
1.2
120
4.8
-
-
-
-
-
-
-
-
mV/
μ
W
mV/
μ
W
mV/
μ
W
mV/
μ
W
ppm/C
μ
V/C
μ
V/C
μ
V/C
μ
V/C
μ
V/C
μ
V/C
μ
V/C
A
A
B
B
A, B
A, B
A
A
B
B
A-B
A-B
t
str
1
overshoot/undershoot peak value and overshoot/undershoot time
Common to high/low gain, time for ±3mV
Output voltage 500mV
→
5mV
Low gain, fall time
Common to high/low gain, V
ref
reference
-
200
-
μ
s
mV
A, B
t
str
2
-
-
25
μ
s
A, B
Settling time
t
est
-
30
-
ns
A
Maximum output voltage
V
o
max
1
-
-
V
A, B
A, B
f=6.9MHz
Notice
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that may occur in equipment using any SHARP
devices shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest device specification sheets before using any SHARP device.
Internet address for Electronic Components Group http://sharp-world.com/ecg/
Internet
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