參數(shù)資料
型號(hào)： GFP70N03
廠(chǎng)商： Electronic Theatre Controls, Inc.
英文描述： N-Channel Enhancement-Mode MOSFET
中文描述： N溝道增強(qiáng)型MOSFET
文件頁(yè)數(shù)： 1/5頁(yè)
文件大小： 92K
代理商： GFP70N03
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
±20
V
Gate-Source Voltage
Continuous Drain Current
(1)
V
GS
I
D
70
A
Pulsed Drain Current
I
DM
200
Maximum Power Dissipation
T
C
= 25°C
T
C
= 100°C
P
D
62.5
25
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 150
°C
Lead Temperature (1/8” from case for 5 sec.)
T
L
275
°C
Junction-to-Case Thermal Resistance
R
θ
JC
2.0
°C/W
Junction-to-Ambient Thermal Resistance
R
θ
JA
62.5
°C/W
Notes:
(1) Maximum DC current limited by the package
GFP70N03
N-Channel Enhancement-Mode MOSFET
T
RENCH
G
EN
F
ET
TO-220AB
V
DS
30V
R
DS(ON)
8
m
I
D
70A
5/16/01
Features
Advanced Process Technology
High Density Cell Design for Ultra Low
On-Resistance
Specially Designed for Low Voltage DC/DC
Converters
Fast Switching for High Efficiency
Mechanical Data
Case:
JEDEC TO-220AB molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.17” (4.3mm) from case
Mounting Torque:
10 in-lbs maximum
Weight:
2.0g
0.154 (3.91)
0.142 (3.60)
Dia.
0.560 (14.22)
0.530 (13.46)
G
D
S
1.148 (29.16)
1.118 (28.40)
0.022 (0.56)
0.014 (0.36)
0.113 (2.87)
0.102 (2.56)
0.205 (5.20)
0.190 (4.83)
*
May be notched or flat
0.360 (9.14)
0.330 (8.38)
PIN
0.415 (10.54)
Max.
0.105 (2.67)
0.095 (2.41)
D
0.155 (3.93)
0.134 (3.40)
0.635 (16.13)
0.580 (14.73)
0.410 (10.41)
0.350 (8.89)
0.160 (4.06)
0.09 (2.28)
0.037 (0.94)
0.026 (0.66)
0.603 (15.32)
0.573 (14.55)
0.185 (4.70)
0.170 (4.31)
0.055 (1.39)
0.045 (1.14)
0.104 (2.64)
0.094 (2.39)
*
G
D
S
Dimensions in inches
and (millimeters)
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