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參數(shù)資料
| 型號： | GDU91-20221 |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Gate Drive Unit |
| 中文描述： | 門驅(qū)動裝置 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 35K |
| 代理商： | GDU91-20221 |
GDU 91 20221
1/4
s Used with Gate Turn-Off Thyristors in high current switching
applications
I
FGM
30A
I
G(ON)
4A
dI
GQ/dt
30A/
s
KEY PARAMETERS
APPLICATIONS
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
V
1 = +5V
V
2 = +15V
V
3 = -15V
Test circuit GTO
GDU connection to GTO
Test circuit emitter and gate drive emitter
Test circuit emitter current
Test circuit receiver and gate drive receiver
Hewlett Packard versatile link HFBR2524
30mA
DG408BP
500mm CO - AX cable type RC5327230
Hewlett Packard versatile link HFBR1524
CONDITIONS - (UNLESS STATED OTHERWISE)
Units
Max.
Typ.
Min.
Conditions
Symbol
I
V1
-
2.2
A
I
V2
+15V PSU current
500Hz, 50% duty cycle
500Hz
Parameter
-
0.55
A
V
2(Min)
On-state gate current
dI
FG/dt
dI
GQ/dt
Rate of rise of negative gate current
Rate of rise of positive gate current
-
Measured 10 - 75% I
FGM
I
T = 1000A,
90% I
G(ON) - 50% IGQM
3.8
--
V
14.0
--
V
14.0
--
V
--
-
30
-
A/
s
-
30
-
A/
s
+5V PSU current
500Hz, I
T = 1000A
GTO T
j = 125C
-15V PSU current
I
V3
-
3.0
A
-
V
1(Min)
+5V PSU minimum
+15V PSU minimum
V
3(Min)
-15V PSU minimum
I
FGM
Peak forward gate current
I
G(ON)
30
4
A
ELECTRICAL CHARACTERISTICS
GDU 91-20221
Gate Drive Unit
Replaces March 1998 version, DS4569-3.1
DS4569-4.0 January 2000
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相關代理商/技術參數(shù) |
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