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參數(shù)資料
| 型號： | GDU90-20421 |
| 廠商： | Dynex Semiconductor Ltd. |
| 英文描述： | Gate Drive Unit |
| 中文描述： | 門驅(qū)動裝置 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 37K |
| 代理商： | GDU90-20421 |
GDU 90-20421
1/4
V
1 = +5V
V
2 = +15V
V
3 = -15V
Test circuit GTO
GDU connection to GTO
Test circuit emitter and gate drive emitter
Test circuit emitter current
Test circuit receiver and gate drive receiver
Hewlett Packard versatile link HFBR2524
30mA
DG646BH
500mm CO - AX cable type RC5327230
Hewlett Packard versatile link HFBR1524
s Used with Gate Turn-Off Thyristors in high current
switching applications
CONDITIONS - (UNLESS STATED OTHERWISE)
I
FGM
30A
I
G(ON)
7A
dI
GQ/dt
40A/
s
APPLICATIONS
KEY PARAMETERS
This datasheet should be used in conjunction with the application note AN4571, GDU9X-XXXXX Series, Gate Drive Unit.
Units
Max.
Typ.
Min.
Conditions
Symbol
I
V1
-
3.80
A
I
V2
+15V PSU current
700Hz, 50% duty cycle
700Hz
Parameter
-
0.73
A
V
2(Min)
On-state gate current
dI
FG/dt
dI
GQ/dt
Rate of rise of negative gate current
Rate of rise of positive gate current
-
Measured 10 - 75% I
FGM
I
T = 2000A,
90% I
G(ON) - 50% IGQM
3.8
--
V
14.0
--
V
14.0
--
V
--
-
30
-
A/
s
-
40
-
A/
s
+5V PSU current
700Hz, I
T = 2000A
GTO T
j = 125C
-15V PSU current
I
V3
-
9.20
A
-
V
1(Min)
+5V PSU minimum
+15V PSU minimum
V
3(Min)
-15V PSU minimum
I
FGM
Peak forward gate current
I
G(ON)
30
7
A
ELECTRICAL CHARACTERISTICS
GDU 90-20421
Gate Drive Unit
Replaces March 1998 version, DS4565-2.1
DS4565-3.0 January 2000
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