參數(shù)資料
型號(hào)： GBU808
廠商： DIODES INC
元件分類： 參考電壓二極管
英文描述： 8.0A GLASS PASSIVATED BRIDGE RECTIFIER
中文描述： 8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
封裝： ROHS COMPLIANT, PLASTIC, GBU, 4 PIN
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 66K
代理商： GBU808
e3
DS21227 Rev. 7 - 2
1 of 3
GBU8005 - GBU810
www.diodes.com
Diodes Incorporated
GBU8005 - GBU810
8.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified
Mechanical Data
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Notes:
1. Unit mounted on 50 x 50 x 1.6mm copper plate heatsink.
2. Non-repetitive, for t > 1.0ms and < 8.3ms.
3. Per element, measured at 1.0MHz and applied reverse voltage of 4.0V DC.
4. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
Case: GBU
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish
Tin. Solderable per MIL-STD-202,
Method 208
Polarity: Marked on Body
Mounting: Through Hole for #6 Screw
Mounting Torque: 5.0 Inch-pounds Maximum
Ordering Information: See Last Page
Marking: Date Code and Type Number
Weight: 6.6 grams (approximate)
Characteristic
Symbol
GBU
8005
GBU
801
GBU
802
GBU
804
GBU
806
GBU
808
GBU
810
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Forward Rectified Current (Note 1) @ TC = 100
°C
I(AV)
8.0
A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
IFSM
200
A
Forward Voltage (per element)
@ IF = 4.0A
VFM
1.0
V
Peak Reverse Current
@ TC = 25
°C
at Rated DC Blocking Voltage
@ TC = 125
°C
IR
5.0
500
mA
I2t Rating for Fusing (t < 8.3ms) (Note 2)
I2t
166
A2s
Typical Total Capacitance per Element (Note 3)
CT
130
pF
Typical Thermal Resistance Junction to Case (Note 1)
RqJC
2.2
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-55 to +150
°C
GBU
Dim
Min
Max
A
21.8
22.3
B
3.5
4.1
C
7.4
7.9
D
1.65
2.16
E
2.25
2.75
F
1.95
2.35
G
1.02
1.27
H
4.83
5.33
J
17.5
18.0
K
3.2 X 45
°
L
18.3
18.8
M
3.30
3.56
N
0.46
0.56
P
0.76
1.0
All Dimensions in mm
- ~ ~ +
A
B
K
D
E
F
G
H
J
M
N
P
L
C
Glass Passivated Die Construction
High Case Dielectric Strength of 1500VRMS
Low Reverse Leakage Current
Surge Overload Rating to 200A Peak
Ideal for Printed Circuit Board Applications
UL Listed Under Recognized Component
Index, File Number E94661
Lead Free Finish, RoHS Compliant (Note 4)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GBU8-08 制造商:FRONTIER 制造商全稱:Frontier Electronics. 功能描述:8A SILICON SINGLE-PHASE BRIDGE RECTIFIERS
GBU808_HF 制造商:Lite-On Semiconductor Corporation 功能描述:8A / 800V BRIDGE
GBU808_HF-TU 制造商:Lite-On Semiconductor Corporation 功能描述:8A / 800V BRIDGE
GBU808C 制造商:HY 制造商全稱:HY ELECTRONIC CORP. 功能描述:SILICON BRIDGE RECTIFIERS
GBU808-G 功能描述:橋式整流器 VR=800V IAV=4.0A RoHS:否 制造商:Vishay 產(chǎn)品:Single Phase Bridge 峰值反向電壓:1000 V 最大 RMS 反向電壓: 正向連續(xù)電流:4.5 A 最大浪涌電流:450 A 正向電壓下降:1 V 最大反向漏泄電流:10 uA 功率耗散: 最大工作溫度:+ 150 C 長(zhǎng)度:30.3 mm 寬度:4.1 mm 高度:20.3 mm 安裝風(fēng)格:Through Hole 封裝 / 箱體:SIP-4 封裝:Tube
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