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參數(shù)資料
| 型號(hào)： | GB100DA60UP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 125 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 600 Volt 100 Amp Warp 2 Speed |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 182K |
| 代理商： | GB100DA60UP |
Insulated Gate Bipolar Transistor
(Warp 2 Speed IGBT), 100 A
GB100DA60UP
Vishay Semiconductors
Document Number: 93001
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
1
FEATURES
NPT warp 2 speed IGBT technology with
positive temperature coefficient
Square RBSOA
HEXFRED
antiparallel diodes with ultrasoft
reverse recovery
Fully isolated package
Very low internal inductance (
5 nH typical)
Industry standard outline
UL approved file E78996
Compliant to RoHS directive 2002/95/EC
BENEFITS
Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
Easy to assemble and parallel
Direct mounting to heatsink
Plug-in compatible with other SOT-227 packages
Higher switching frequency up to 150 kHz
Lower conduction losses and switching losses
Low EMI, requires less snubbing
PRODUCT SUMMARY
V
CES
600 V
I
C
DC
100 A at 61 °C
V
CE(on)
typical at 100 A, 25 °C
2.4 V
I
F
DC
100 A at 85 °C
S
OT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter voltage
V
CES
600
V
Continuous collector current
I
C
T
C
= 25 °C
125
A
T
C
= 80 °C
85
Pulsed collector current
I
CM
300
Clamped inductive load current
I
LM
300
Diode continuous forward current
I
F
T
C
= 25 °C
160
T
C
= 80 °C
105
Peak diode forward current
I
FM
200
Gate to emitter voltage
V
GE
± 20
V
Power dissipation, IGBT
P
D
T
C
= 25 °C
447
W
T
C
= 80 °C
250
Power dissipation, diode
P
D
T
C
= 25 °C
313
T
C
= 80 °C
175
Isolation voltage
V
ISOL
Any terminal to case, t = 1 min
2500
V
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