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參數(shù)資料
| 型號： | GAL22V10B-20LJI |
| 廠商： | LATTICE SEMICONDUCTOR CORP |
| 元件分類： | PLD |
| 英文描述： | High Performance E2CMOS PLD Generic Array Logic |
| 中文描述： | EE PLD, 20 ns, PQCC28 |
| 封裝： | PLASTIC, LCC-28 |
| 文件頁數(shù)： | 6/18頁 |
| 文件大?。?/td> | 223K |
| 代理商： | GAL22V10B-20LJI |
SSpecifications
GAL22LV10D
6
1) The leakage current is due to the internal pull-up resistor on all pins. See
Input Buffer
section for more information.
2) One output at a time for a maximum duration of one second. Vout = 0.5V was selected to avoid test problems caused by tester
ground degradation. Characterized but not 100% tested.
3) Typical values are at Vcc = 3.3V and T
A
= 25
°
C
COMMERCIAL
I
CC
Operating Power
V
IL
= 0V
V
IH
= 3.0V Unused Inputs at
V
IL
—
90
130
mA
Supply Current
f
toggle
= 1MHz Outputs Open
V
IL
V
IH
Input Low Voltage
Vss - 0.3
—
0.8
V
Input High Voltage
2.0
—
5.25
V
I/O High Voltage
2.0
—
Vcc+0.5
V
I
IL
1
I
IH
Input or I/O Low Leakage Current
0V
≤
V
IN
≤
V
IL
(MAX.)
—
—
-100
μ
A
Input or I/O High Leakage Current
(
V
cc-0.2)V
≤
V
IN
≤
V
CC
—
—
10
μ
A
Input High Leakage Current
V
cc
≤
V
IN
≤
5.25V
—
—
10
μ
A
I/O High Leakage Current
V
cc
≤
V
IN
≤
4.6V
—
—
20
mA
V
OL
Output Low Voltage
I
OL
= MAX.
V
in =
V
IL
or
V
IH
—
—
0.4
V
I
OL
= 500
μ
A
V
in =
V
IL
or
V
IH
—
—
0.2
V
V
OH
Output High Voltage
I
OH
= MAX.
V
in =
V
IL
or
V
IH
2.4
—
—
V
I
OH
= -100
μ
A
V
in =
V
IL
or
V
IH
V
cc-0.2V
—
—
V
I
OL
I
OH
I
OS
2
Low Level Output Current
—
—
8
mA
High Level Output Current
—
—
–8
mA
Output Short Circuit Current
V
CC
= 3.3V
V
OUT
= 0.5V T
A
= 25
°
C
-15
—
-80
mA
Recommended Operating Conditions
Commercial Devices:
Ambient Temperature (T
A
) ...............................0 to 75
°
C
Supply voltage (V
)
with Respect to Ground ......................... +3.0 to +3.6V
Absolute Maximum Ratings
(1)
Supply voltage V
.................................... -0.5 to +4.6V
Input voltage applied ................................. -0.5 to +5.6V
I/O voltage applied .................................... -0.5 to +4.6V
Off-state output voltage applied ................ -0.5 to +4.6V
Storage Temperature .................................-65 to 150
°
C
Ambient Temperature with
Power Applied .........................................-55 to 125
°
C
1.Stresses above those listed under the “Absolute Maximum
Ratings” may cause permanent damage to the device. These
are stress only ratings and functional operation of the device at
these or at any other conditions above those indicated in the
operational sections of this specification is not implied (while
programming, follow the programming specifications).
SYMBOL
PARAMETER
CONDITION
MIN.
TYP.
3
MAX.
UNITS
DC Electrical Characteristics
Over Recommended Operating Conditions (Unless Otherwise Specified)
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PDF描述 |
|---|---|
| GAL22V10B-20LPI | High Performance E2CMOS PLD Generic Array Logic |
| GAL22V10B-25LJ | High Performance E2CMOS PLD Generic Array Logic |
| GAL22V10B-25LP | High Performance E2CMOS PLD Generic Array Logic |
| GAL22V10B-25QJ | High Performance E2CMOS PLD Generic Array Logic |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GAL22V10B-20LPI | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:High Performance E2CMOS PLD Generic Array Logic |
| GAL22V10B-20LR/883 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable PLD |
| GAL22V10B-25LD/883 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Electrically-Erasable PLD |
| GAL22V10B25LJ | 制造商:LATTICE 功能描述:New |
| GAL22V10B-25LJ | 制造商:LATTICE 制造商全稱:Lattice Semiconductor 功能描述:High Performance E2CMOS PLD Generic Array Logic |
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