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參數資料
| 型號： | GA200SA60SP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 342 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors N-Ch 600 Volt 100A |
| 文件頁數： | 1/9頁 |
| 文件大小： | 178K |
| 代理商： | GA200SA60SP |
Insulated Gate Bipolar Transistor
Ultralow V
CE(on)
, 342 A
GA200SA60SP
Vishay Semiconductors
Document Number: 94363
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
1
Note
(1)
Maximum I
current admitted 100 A to do not exceed the
maximum temperature of terminals
FEATURES
Standard: Optimized for minimum saturation
voltage and low speed up to 5 kHz
Lowest conduction losses available
Fully isolated package (2500 V
AC
)
Very low internal inductance (5 nH typical)
Industry standard outline
UL approved file E78996
Compliant to RoHS directive 2002/95/EC
Designed and qualified for industrial level
BENEFITS
Designed for increased operating efficiency in power
conversion: UPS, SMPS, TIG welding, induction heating
Easy to assemble and parallel
Direct mounting to heatsink
Plug-in compatible with other SOT-227 packages
Note
(1)
Maximum I
RMS
current admitted 100 A to do not exceed the maximum temperature of terminals
PRODUCT SUMMARY
V
CES
V
CE(on)
(typical) at 200 A, 25 °C
I
C
at T
C
= 97 °C
(1)
600 V
1.33 V
200 A
S
OT-227
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
Collector to emitter breakdown voltage
V
CES
600
V
Continuous collector current
I
C
(1)
T
C
= 25 °C
T
C
= 97 °C
Repetitive rating; V
GE
= 20 V, pulse width limited
by maximum junction temperature
See fig. 15
V
CC
= 80 % (V
CES
), V
GE
= 20 V,
L = 10 μH, R
g
= 2.0
,
See fig. 14
342
A
200
Pulsed collector current
I
CM
400
Clamped Inductive load current
I
LM
400
Gate to emitter voltage
V
GE
± 20
V
Reverse voltage avalanche energy
E
ARV
Repetitive rating; pulse width limited by
maximum junction temperature
155
mJ
RMS isolation voltage
ISOL
Any terminal to case, t = 1 minute
2500
V
Maximum power dissipation
P
D
T
C
= 25 °C
T
C
= 100 °C
781
W
312
Operating junction and storage
temperature range
T
J
, T
Stg
- 55 to + 150
°C
Mounting torque
6-32 or M3 screw
12 (1.3)
lbf
in (N
m)
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TYP.
MAX.
UNITS
Junction to case
R
thJC
R
thCS
-
0.16
°C/W
Case to sink, flat, greased surface
0.05
-
Weight of module
30
-
g
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相關代理商/技術參數 |
參數描述 |
|---|---|
| GA200SA60SPBF | 制造商:Vishay Semiconductors 功能描述:IGBT SOT-227 TUBE 10 |
| GA200SA60U | 功能描述:IGBT UFAST 600V 100A SOT227 RoHS:否 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設備封裝:SOT-227B |
| GA200SA60UP | 制造商:Vishay Angstrohm 功能描述:Trans IGBT Chip N-CH 600V 200A 4-Pin SOT-227 制造商:Vishay Semiconductors 功能描述:SINGLE IGBT 600V 200A 制造商:Vishay Semiconductors 功能描述:SINGLE IGBT, 600V, 200A 制造商:Vishay Intertechnologies 功能描述:Transistor IGBT N-Ch 600V 200A SOT227 |
| GA200SA60UPBF | 制造商:Vishay Semiconductors 功能描述:IGBT SOT-227 TUBE 10 |
| GA200TD120U | 制造商:International Rectifier 功能描述: |
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