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參數(shù)資料
| 型號： | GA200HS60S |
| 元件分類： | 開關(guān) |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 525K |
| 代理商： | GA200HS60S |
APEM
www.apem.com
A-81
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Fully sealed - matt black
A
Solder lug terminals - four pole
Solder lug terminals - three pole
Solder lug terminals - double pole
MODEL
STRUCTURE
Function 6
Other functions
I
II
III
12146 X778
ON
-
ON
12149 X778
ON
OFF
ON
12147 X778
MOM OFF MOM
12148 X778
ON
OFF MOM
12144 X778
ON
12144-1R X778
MOM ON
ON
12144-2R X778
MOM ON MOM
12145 X778
ON MOM
I
II
III
12156 X778
ON
-
ON
12159 X778
ON
OFF
ON
12157 X778
MOM OFF MOM
12158 X778
ON
OFF MOM
I
II
III
12166 X778
ON
-
ON
12169 X778
ON
OFF
ON
12167 X778
MOM OFF MOM
12168 X778
ON
OFF MOM
12164 X778
ON
12164-1R X778
ON
ON MOM
12164-2R X778
MOM ON MOM
Shown with standard lever
Flat
43
2
3
1
2
- 1
(.098)
(.047)
(.
0
6
)
1
.7
0
1.20
2.50
(.
1
6
1
)
4
.1
0
(.039)
1.00
(.
3
8
)
8
.6
0
(.681)
(.409)
(.594)
(.161)
(.
0
1
9
)
(.
6
2
9
)
(.629)
(.
2
3
6
)
(.
0
9
8
)
A
(15/32-32UNS)
EPOXY
(.
1
5
7
)
I
II
III
15.10
4.10
17.30
10.40
16.00
11.90-32UNS
4
.0
0
.5
0
1
6
.0
0
2
.5
0
6
.0
0
6
.0
0
(.
2
3
6
D
IA
)
(.059)
1.50
0
.5
0
10.40
17.30
4.10
15.10
III
II
I
A
(.
0
1
9
)
(.161)
(.594)
(.409)
(.681)
6
.0
0
2
.5
0
(.
0
9
8
)
(.
2
3
6
)
1
6
.0
0
(.
6
2
9
)
(.
1
5
7
)
4
.0
0
EPOXY
6
.0
0
(.
2
3
6
D
IA
)
11.90-32UNS
(15/32-32UNS)
(.866)
22.00
1.50
(.059)
0
.5
0
10.40
17.30
4.10
15.10
III
II
I
A
(.
0
1
9
)
(.161)
(.594)
(.409)
(.681)
4
.0
0
(.
1
5
7
)
(.
2
3
6
)
(.
0
9
8
)
2
.5
0
6
.0
0
(.
2
3
6
D
IA
)
6
.0
0
(15/32-32UNS)
11.90-32UNS
(.
6
2
9
)
1
6
.0
0
(1.106)
28.10
(.059)
1.50
EPOXY
Function 6
Typical angle of throw (A)
24°
Functions 9, 7, 8, 4
20°
Function 5
12°
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GA200HS60S1 | 功能描述:IGBT 模塊 200 Volt 200 Amp RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| GA200HS60S1PBF | 制造商:Vishay Intertechnologies 功能描述:IGBT Module N-CH 480A 600V INT-A-PAK |
| GA200NS61U | 制造商:IRF 制造商全稱:International Rectifier 功能描述:High Side Switch Chopper Module Ultra-Fast Speed IGBT |
| GA200SA60S | 功能描述:IGBT STD 600V 100A SOT227 RoHS:否 類別:半導(dǎo)體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| GA200SA60SP | 制造商:Vishay Intertechnologies 功能描述:GA200SA60SP Series 600 V 200 A Insulated Gate Bipolar Transistor - SOT-227 制造商:Vishay Intertechnologies 功能描述:Transistor IGBT N-Ch 600V 342A SOT227 |
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