型號(hào): | GA100TS120 |
文件頁(yè)數(shù): | 1/3頁(yè) |
文件大?。?/td> | 53K |
代理商: | GA100TS120 |
相關(guān)PDF資料 |
PDF描述 |
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GA100 | SCRs Nuclear Radiation Resistant, Planar |
GA102T1M1MZ | Laser power monitoring diode for optical disc system |
GA102T1M2MZ | Laser power monitoring diode for optical disc system |
GA102 | SCRs Nuclear Radiation Resistant, Planar |
GA103T8R1MZ | Optical disk devices for RF signal detection |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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GA100TS120U | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HALF-BRIDGE IGBT INT-A-PAK |
GA100TS120UPBF | 制造商:Vishay Intertechnologies 功能描述:IGBT Module N-CH 182A 1.2KV INT-A-PAK |
GA100TS60SF | 功能描述:IGBT 模塊 1200 Volt 100 Amp RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
GA100TS60SFPBF | 制造商:Vishay Angstrohm 功能描述:Trans IGBT Module N-CH 600V 220A 7-Pin INT-A-PAK |