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參數(shù)資料
| 型號(hào)： | G9230-01 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | InGaAs PIN photodiode |
| 中文描述： | 銦鎵砷PIN光電二極管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | G9230-01 |
Features
l Easy to handle since there are no wires on chip
(AnSn eutectic bonding)
Optical fibers can be brought closer to the chip
l Miniature package: 2 × 2 × 1 mm
l High sensitivity: 0.95 A/W Typ. (λ=1.55 m)
l Precise chip position tolerance: ±0.075 mm
Applications
l LD monitor
l Optical fiber communication
PHOTODIODE
InGaAs PIN photodiode
Uses small package with no wire
G9230-01
PRELIMINARY DATA
Jan. 2003
1
I General / Absolute maximum ratings
Parameter
Symbol
value
Unit
Active area
-
f0.3
mm
Reverse voltage
VR Max.
10
V
Operating temperature *
Topr.
-40 to +85
°C
Storage temperature *
Tstg.
-40 to +85
°C
* In N environment or in vacuum
I Electrical and optical characteristics (Ta=25 °C)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
l
-
0.95 to 1.7
-
m
l=1.3 m
-
0.85
-
A/W
Photo sensitivity
S
l=1.55 m
0.85
0.95
-
A/W
Dark current
ID
VR=5 V
-
0.3
1.5
nA
Shunt resistance
Rsh
VR=10 mV
-
1000
-
MW
Terminal capacitance
Ct
VR=5 V, f=1 MHz
-
5
-
pF
Cut-off frequency
fc
VR=5 V, RL=50 W
-
400
-
MHz
Noise equivalent power
NEP
l=lp-
4 × 10-15
-W/Hz1/2
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| G9230-01_04 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
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