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參數(shù)資料
| 型號(hào)： | G8921-01 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | GaAs PIN photodiode array |
| 中文描述： | GaAs PIN型光電二極管陣列 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 115K |
| 代理商： | G8921-01 |
G8921-01
Features
l Active area: φ0.06 mm
Element pitch: 250 m
4-element array
l High-speed response: 10 Gbps [(2.5 Gbps per channel) ×4]
at low bias voltage (VR=2 V)
l Low dark current, low capacitance
l Up to 16 elements available as option
Applications
l Optical fiber communications
l High-speed data link
PHOTODIODE
GaAs PIN photodiode array
Photodiode array for data communication
1
I General ratings
Parameter
Symbol
Value
Unit
Active area
-
f0.06
mm
Element pitch
-
250
m
Number of elements
-
4
ch
I Absolute maximum ratings
Parameter
Symbol
Remark
Value
Unit
Reverse voltage
VR Max.
30
V
Reverse current
IR Max.
0.5
mA
Operating temperature
Topr
-40 to +85
°C
Storage temperature
Tstg
*
-55 to +125
°C
* In N2 environment or in vacuum
I Electrical and optical characteristics (Unless other wise, Ta=25 °C, per 1 element)
Parameter
Symbol
Condition
Min.
Typ.
Max.
Unit
Spectral response range
l
-
470 to 870
-
nm
Peak sensitivity wavelength
lp
-
850
-
nm
Photo sensitivity
S
l=850 nm
0.45
0.5
-
A/W
Dark current
ID
VR=5 V
-
2
50
pA
Terminal capacitance
Ct
VR=2 V, f=1 MHz
-
0.35
0.5
pF
Cut-off frequency
fc
l=850 nm, VR=2 V,
RL=50 W, -3 dB
2
-
GHz
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| G8941 | Aluminum Snap-In Capacitor; Capacitance: 3900uF; Voltage: 80V; Case Size: 35x30 mm; Packaging: Bulk |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| G8921-01_04 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:GaAs PIN photodiode array |
| G8925 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode with preamp |
| G8925-21 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode with preamp |
| G8925-22 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode with preamp |
| G8925-23 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode with preamp |
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