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參數(shù)資料
| 型號(hào)： | G8522-01 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Aluminum Snap-In Capacitor; Capacitance: 560uF; Voltage: 180V; Case Size: 22x30 mm; Packaging: Bulk |
| 中文描述： | GaAs PIN型光電二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 103K |
| 代理商： | G8522-01 |
G8522 series are high-speed PIN photodiodes developed for optical communications and are capable of GHz (gigahertz) operation even at a low
reverse voltage (2 V or less). Please contact our sales office with your specific needs.
Features
l High-speed response at low reverse voltage
G8522-01: 3 GHz Min. (VR=2 V)
G8522-02: 1.9 GHz Min. (VR=2 V)
G8522-03: 1.5 GHz Min. (VR=2 V)
l Low noise, low dark current
l Low terminal capacitance
Applications
l Optical fiber communications
l Fiber channels
l Gigabit Ethernet
PHOTODIODE
GaAs PIN photodiode
High-speed response at low reverse voltage
G8522 series
s Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Value
Unit
Reverse voltage VR Max.30
V
Operating
temperature
Topr
-40 to +85
°C
Storage
temperature
Tstg
-55 to +125
°C
s Electrical and optical characteristics (Ta=25
°C)
G8522-01
G8522-02
G8522-03
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Active area size
-
φ40
--
φ80
--
φ120
-m
Spectral
response range
λ
-
470 to
870
-
470 to
870
-
470 to
870
-
nm
Peak sensitivity
wavelength
λp
-
850
-
850
-
850
-
nm
Photo sensitivity
S
λ=850 nm
0.45
0.5
-
0.45
0.5
-
0.45
0.5
-
A/W
Dark current
ID
VR=5 V
-
2
50
-
8
200
-
20
500
pA
Terminal
capacitance
Ct
VR=2 V, f=1 MHz
-
0.3
0.45
-
0.45
0.65
-
0.8
1.2
pF
Cut-off
frequency
fc
VR=2 V, RL=50
λ=850 nm, -3 dB
3
-
-1.9-
-
1.5-
-
GHz
1
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| G8522-02 | Aluminum Snap-In Capacitor; Capacitance: 100uF; Voltage: 420V; Case Size: 20x30 mm; Packaging: Bulk |
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| G8605 | Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 420V; Case Size: 25x30 mm; Packaging: Bulk |
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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| G8522-03 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:GaAs PIN photodiode |
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