參數(shù)資料
型號(hào): G8376-03
廠商: Hamamatsu Photonics
英文描述: InGaAs PIN photodiode
中文描述: 銦鎵砷PIN光電二極管
文件頁(yè)數(shù): 1/2頁(yè)
文件大小: 215K
代理商: G8376-03
PHOTODIODE
InGaAs PIN photodiode
Standard type
G8376 series
Features
l Low noise, low dark current
l Low terminal capacitance
l 3-pin TO-18 package
Applications
l NIR (near infrared) photometry
l Optical communication
InGaAs PIN photodiodes are NIR (near infrared) detectors that feature high-speed response and low noise. Various active area sizes are
provided to meet wide applications.
s Specifications / Absolute maximum ratings
Absolute maximum ratings
Active area
Reverse
voltage
VR
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
Window material
Package
(mm)
(V)
(°C)
G8376-01
φ0.04
G8376-02
φ0.08
G8376-03
φ0.3
G8376-05
B orosilicate glass
with anti-reflective
c oating (optimiz ed
for 1.55 m peak)
TO-18
φ0.5
20
-40 to +85
-55 to +125
s Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Spectral
response
range
Peak
sensitivity
wavelength
λp
Photo
sensitivity
S
Dark
current
ID
VR=5 V
Cut-off
frequency
fc
VR=2 V
RL=50
Termi n al
capacitance
Ct
VR=5 V
f=1 MHz
Shunt
resistance
Rsh
VR=10 mV
D
λ=λp
NEP
λ=λp
Type No.
(m)
1.3 m
(A/W)
λ=λp
(A/W)
Typ.
(nA)
Max.
(nA)
-3 dB
(MHz)
(pF)
(M
)
(c m Hz1/2/W)
(W/Hz
1/2)
G8376-01
0.06 0.3
3000
0.5
10000
2 × 10
-15
G8376-02
0.08 0.4
2000
1
8000
2 × 10
-15
G8376-03
0.3
1.5
400 *
5
1000
4 × 10
-15
G8376-05
0.9 to 1.7
1.55
0.9
0.95
0.5
2.5
200 *
12
300
5 × 10
12
8 × 10
-15
* VR=5 V
1
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
G8376-05 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode
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