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參數(shù)資料
| 型號： | G8194 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Aluminum Snap-In Capacitor; Capacitance: 150uF; Voltage: 400V; Case Size: 35x20 mm; Packaging: Bulk |
| 中文描述： | 銦鎵砷PIN光電二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 111K |
| 代理商： | G8194 |
GBP2005 – GBP210
1 of 3
2002 Won-Top Electronics
GBP2005 – GBP210
2.0A GLASS PASSIVATED BRIDGE RECTIFIER
Features
!
Glass Passivated Die Construction
!
Low Forward Voltage Drop
A
!
High Current Capability
H
!
High Reliability
!
High Surge Current Capability
B
!
Ideal for Printed Circuit Boards
+
~
-
G
D
K
E
Mechanical Data
P
!
Case: Molded Plastic
!
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
C
!
Polarity: As Marked on Body
!
Weight: 2.0 grams (approx.)
!
Mounting Position: Any
!
Marking: Type Number
J
L
Maximum Ratings and Electrical Characteristics @T
A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
GBP
2005
GBP
201
GBP
202
GBP
204
GBP
206
GBP
208
GBP
210
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
100
200
400
600
800
1000
V
RMS Reverse Voltage
VR(RMS)
35
70
140
280
420
560
700
V
Average Rectified Output Current
@TA = 50°C
IO
2.0
A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
50
A
Forward Voltage (per bridge)
@IF = 2.0A
VFM
1.1
V
Peak Reverse Current
@TA = 25°C
At Rated DC Blocking Voltage
@TA = 100°C
IR
10
1.0
A
mA
Operating Temperature Range
Tj
-55 to +125
°C
Storage Temperature Range
TSTG
-55 to +150
°C
WTE
POWER SEMICONDUCTORS
GBP
Dim
Min
Max
A
14.25
14.75
B
10.2
10.6
C
3.8
4.7
D
14.25
14.73
E
2.29
—
G
1.17
1.42
H
2.8 x 45°
J
1.14
1.52
K
0.76
0.86
L
0.3
0.64
P
3.56
4.06
All Dimensions in mm
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相關(guān)代理商/技術(shù)參數(shù) |
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| G8194-22FC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Optoelectronic |
| G8194-23 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:InGaAs PIN photodiode |
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