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參數(shù)資料
| 型號： | G6849-01 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | InGaAs PIN photodiode |
| 中文描述： | 銦鎵砷PIN光電二極管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 117K |
| 代理商： | G6849-01 |
Features
l Active area
G6849
:
B2 mm quadrant element
G6849-01:
B1 mm quadrant element
l Low noise
l High reliability
Applications
l Spot light position detection
l Measurement equipment
PHOTODIODE
InGaAs PIN photodiode
Quadrant type
G6849 series
s General ratings
Parameter
G6849
G6849-01
Unit
Package
TO-5
-
Active area
φ2/quadrant
φ1/quadrant
mm
s Absolute maximum ratings (Ta=25
°C)
Parameter
Symbol
Value
Unit
Reverse voltage
VR
5V
Operating temperature
Topr
-40 to +85
°C
Storage temperature
Tstg
-55 to +125
°C
s Electrical and optical characteristics (Ta=25
°C, per 1 element)
G6849
G6849-01
Parameter
Symbol
Condition
Min.
Typ.
Max.
Min.
Typ.
Max.
Unit
Spectral response range
λ
-
0.9 to 1.7
--
0.9 to 1.7
-m
P e ak s ensitivity wavelength
λp
-
1.55
-
1.55
-
m
λ=1.3 m
0.9
-
0.9
-
Photo sensitivity
S
λ=1.55 m
0.95
-
0.95
-
A/W
Dark current
ID
VR=1 V
-
0.5
5
-
0.15
1.5
nA
Cut-off frequency
fc
VR=1 V, RL=50
λ=1.3 m, -3 dB
-
30
-
120
-
MHz
Terminal capacitance
Ct
VR=1 V, f=1 MHz
-
100
-
20
-
pF
Shunt resistance
Rsh
VR=10 mV
-
50
-
200
-
M
Detectivity
D
λ=λp
-
5 × 10
12
-
5 × 10
12
-
cmHz
1/2/W
Noise equivalent power
NEP
λ=λp
-
2 × 10
-14
-
1 × 10
-14
-W/Hz
1/2
1
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