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參數(shù)資料
| 型號(hào)： | G5853-21 |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | InGaAs PIN photodiode |
| 中文描述： | 銦鎵砷PIN光電二極管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 260K |
| 代理商： | G5853-21 |
PHOTODIODE
InGaAs PIN photodiode
Long wavelength type (up to 2.6 m)
G8423/G8373/G5853 series
Features
l Long cut-off wavelength: 2.6 m
l 3-pin TO-18 package: low price
l Thermoelectrically cooled TO-8 package: low dark current
l Active area: φ0.3 to φ3 mm
Applications
l Gas analysis
l Spectrophotometer
l NIR (near infrared) photometry
1
s Specifications / Absolute maximum ratings
Absolute maximum ratings
Active
area
Thermistor
power
dissipation
TE-cooler
allowable
current
Reverse
voltage
VR
Operating
temperature
Topr
Storage
temperature
Tstg
Type No.
D im en siona l
outline
Package
Cooling
(mm)
(mW)
(A)
(V)
(°C)
G8423-03
φ0.3
G8423-05
φ0.5
G8373-01
TO-18
φ1
G8373-03
TO-5
Non-cooled
φ3
-
-40 to +85
-55 to +125
G5853-103
φ0.3
G5853-11
φ1
G5853-13
TO-8
One-stage
TE-cooled
φ3
1.5
G5853-203
φ0.3
G5853-21
φ1
G5853-23
TO-8
Two-stage
TE-cooled
φ3
0.2
1.0
2
-40 to +70
-55 to +85
s Electrical and optical characteristics (Typ. unless otherwise noted)
M e asure m e nt
condition
Element
te m pe rature
Spectral
response
range
λ
Peak
se n s itiv ity
wa ve le n g th
λp
Photo
sensitivity
S
λ=λp
Dark current
ID
VR=1 V
Cut-off
freq ue ncy
fc
VR=1 V
RL=50
Terminal
capacitance
Ct
VR=1 V
f=1 MHz
Shunt
re sista n ce
Rsh
V R=1 0 m V
D
λ=λp
NEP
λ=λp
Type No.
(°C)
(m)
(A/W)
Typ.
(A)
Max.
(A)
-3 dB
(MHz)
(pF)
(k
)
(cm H z
1/2 /W ) (W/Hz1/2)
G8423-03
2
20
60
40
30
7 × 10
-13
G8423-05
5
50
60
15
1 × 10
-12
G8373-01
15
75
15
200
3
2 × 10
-12
G8373-03
25
1.2 to 2.6
150
1500
1.5
1800
0.3
5 × 10
10
8 × 10
-12
G5853-103
0.2
2
60
40
300
3 × 10
-13
G5853-11
1.5
7.5
15
200
30
7 × 10
-13
G5853-13
-10
1.2 to 2.57
15
150
1.5
1800
3
1 × 10
11
2 × 10
-12
G5853-203
0.1
1
60
40
600
2 × 10
-13
G5853-21
0.8
4
15
200
60
5 × 10
-13
G5853-23
-20
1.2 to 2.55
2.3
1.1
7.5
75
1.5
1800
6
2 × 10
11
1.8 × 10
-12
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