- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375994 > FZT705 (ZETEX PLC) Circular Connector; No. of Contacts:15; Series:; Body Material:Aluminum; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:14-15 PDF資料下載
參數(shù)資料
| 型號： | FZT705 |
| 廠商： | ZETEX PLC |
| 元件分類： | 功率晶體管 |
| 英文描述： | Circular Connector; No. of Contacts:15; Series:; Body Material:Aluminum; Connector Shell Size:14; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:14-15 |
| 中文描述： | 2 A, 120 V, PNP, Si, POWER TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 70K |
| 代理商： | FZT705 |
SOT223 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 - OCTOBER 1995
FEATURES
*
*
Guaranteed h
FE
Specified up to 2A
Fast Switching
PARTMARKING DETAIL -
COMPLEMENTARY TYPES -
DEVICE TYPE IN FULL
FZT604 - FZT704
FZT605 - FZT705
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
FZT604
FZT605
UNIT
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
120
140
V
Collector-Emitter Voltage
100
120
V
Emitter-Base Voltage
10
V
Peak Pulse Current
4
A
Continuous Collector Current
1.5
A
Power Dissipation
2
W
Operating and Storage Temperature Range
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
FZT604
FZT605
V
(BR)CBO
120
140
V
V
I
C
=100
μ
A
I
C
=100
μ
A
I
C
=10mA*
I
C
=10mA*
I
E
=100
μ
A
V
CB
=100V
V
CB
=100V,
T
amb
=100°C
Collector-Emitter
Breakdown Voltage
FZT604
FZT605
V
(BR)CEO
100
120
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
10
V
Collector Cut-Off
Current
FZT604
I
CBO
0.01
10
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
FZT605
0.01
10
V
CB
=120V
V
CB
=120V,
T
amb
=100°C
Emitter Cut-Off Current
I
EBO
0.1
V
EB
=8V
Collector-Emitter
Cut-Off Current
FZT604
I
CES
10
V
CES
=100V
FZT605
10
V
CES
=120V
Collector-EmitterSaturation
Voltage
V
CE(sat)
1.0,
1.5
V
V
I
C
=250mA, I
=0.25mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, I
B
=1mA*
I
C
=1A, V
CE
=5V*
I
C
=50mA, V
CE
=5V
I
C
=500mA, V
=5V*
I
C
=1A, V
CE
=5V*
I
C
=2A, V
CE
=5V*
Base-Emitter Saturation Voltage
V
BE(sat)
V
BE(on)
h
FE
1.8
V
Base-Emitter Turn-On Voltage
1.7
V
Static Forward
Current Transfer Ratio
2K
5K
2K
0.5K
100K
C
C
E
B
FZT604
FZT605
3 - 202
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FZT649 | NPN Low Saturation Transistor(集電極電流達(dá)3A的NPN低飽和電壓晶體管) |
| FZT689 | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| FZT689B | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| FZT690 | NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR |
| FZT690B | RES 100K .250W 1% |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FZT705 | 制造商:Diodes Incorporated 功能描述:TRANSISTOR DARLINGTON SOT-223 |
| FZT7053 | 制造商:DIODES 制造商全稱:Diodes Incorporated 功能描述:100V NPN Darlington transistor in SOT223 |
| FZT7053TA | 功能描述:達(dá)林頓晶體管 PNP PWR Transistor 2A Current -120V RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FZT705TA | 功能描述:達(dá)林頓晶體管 PNP Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FZT705TA-CUT TAPE | 制造商:DIODES 功能描述:FZT705 Series 120 V 2 A PNP Silicon Planar Medium Power Darlington Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。