參數(shù)資料
型號(hào): FZ800R12KS4
廠商: Electronic Theatre Controls, Inc.
英文描述: IGBT-Module
中文描述: IGBT的模塊
文件頁數(shù): 1/9頁
文件大小: 101K
代理商: FZ800R12KS4
Technische Information / Technical Information
FZ 800 R12 KS4
IGBT-Module
IGBT-Modules
Vorlufige Daten
Preliminary data
Hchstzulssige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
V
CES
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T
C
= 80°C
T
C
= 25 °C
I
C,nom.
800
A
I
C
1200
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t
P
= 1 ms, T
C
= 80°C
I
CRM
1600
A
Gesamt-Verlustleistung
total power dissipation
T
C
=25°C, Transistor
P
tot
6,9
kW
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
GES
+/- 20V
V
Dauergleichstrom
DC forward current
I
F
800
A
Periodischer Spitzenstrom
repetitive peak forw. current
t
P
= 1 ms
I
FRM
1600
A
Grenzlastintegral der Diode
I
2
t - value, Diode
V
R
= 0V, t
p
= 10ms, T
Vj
= 125°C
I
2
t
A
2
s
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
V
ISOL
2.500
V
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I
C
= 800 A, V
GE
= 15V, Tvj = 25°C
V
CE sat
-
3,00
-
V
I
C
= 800 A, V
GE
= 15V, T
vj
= 125°C
-
3,60
-
V
Gate-Schwellenspannunggate threshold voltage
I
C
= 32 mA, V
CE
= V
GE
, T
vj
= 25°C
V
GE(th)
4,5
5,5
6,5
V
Eingangskapazitt
input capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
ies
-
52
-
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1MHz,T
vj
= 25°C,V
CE
= 25V, V
GE
= 0V
C
res
-
t.b.d.
-
nF
Gateladung
gate charge
V
GE
= -15V ... + 15V, V
CE
= 600V
Q
G
-
8,4
-
μC
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V
CE
= 1200V, V
GE
= 0V, T
vj
= 25°C
I
CES
-
t.b.d.
-
μA
V
CE
= 1200V, V
GE
= 0V, T
vj
= 125°C
-
t.b.d.
-
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V
CE
= 0V, V
GE
= 20V, T
vj
= 25°C
I
GES
-
-
400
nA
prepared by: R. Jrke
date of publication : 2000-06-14
approved by: Jens Thurau
revision: 1
185.000
1 (9)
FZ800R12KS4, preliminary.xls
15.06.00
相關(guān)PDF資料
PDF描述
FZL4145D Quad Driver Incl. Short-Circuit Signaling
FZL4146 Quad Driver Incl. Short-Circuit Signaling
FZL4146G Quad Driver Incl. Short-Circuit Signaling
FZL4146 Quad Driver Incl. Short-Circuit Signaling
FZT2907 SOT223 PNP SILICON PLANAR SWITCHING TRANSISTOR
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FZ800R12KS4_B2 功能描述:IGBT 模塊 N-CH 1.2KV 1.2KA RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FZ800R12KS4V2 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IGBT Module
FZ800R16KF4 功能描述:IGBT 模塊 1600V 800A SINGLE RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FZ800R17KF4C 功能描述:IGBT 模塊 RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FZ800R17KF6C_B2 功能描述:IGBT 模塊 N-CH 1.7KV 1.3KA RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: