參數(shù)資料
型號: FZ300R12KE3G
廠商: INFINEON TECHNOLOGIES AG
元件分類: IGBT 晶體管
英文描述: Technische Information / technical information
中文描述: 480 A, 1200 V, N-CHANNEL IGBT
封裝: MODULE-5
文件頁數(shù): 1/8頁
文件大?。?/td> 264K
代理商: FZ300R12KE3G
62mm C-Serien Modul mit Trench/Feldstop IGBT3 und Emcon High Efficiency Diode
62mm C-series module with the trench/fieldstop IGBT3 and Emcon High Efficiency diode
1
Technische Information / technical information
FZ300R12KE3G
IGBT-modules
IGBT-Module
prepared by: Mark Münzer
approved by: Wilhelm Rusche
date of publication: 2004-7-5
revision: 3.2
IGBT-Wechselrichter / IGBT-inverter
Hchstzulssige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TY = 25°C
V
1200
V
Kollektor-Dauergleichstrom
DC-collector current
T = 80°C, TY = 150°C
T = 25°C, TY = 150°C
I òó
I
300
480
A
A
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
t = 1 ms
I¢
600
A
Gesamt-Verlustleistung
total power dissipation
T = 25°C, TY = 150°C
Púóú
1450
W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V
+/-20
V
Charakteristische Werte / characteristic values
min.
typ.
max.
Kollektor-Emitter Sttigungsspannung
collector-emitter saturation voltage
I = 300 A, V = 15 V
I = 300 A, V = 15 V
V ùèú
1,70
2,00
2,15
V
V
TY = 25°C
TY = 125°C
Gate-Schwellenspannung
gate threshold voltage
I = 12,0 mA, V = V, TY = 25°C
Vúì
5,0
5,8
6,5
V
Gateladung
gate charge
V = -15 V ... +15 V
Q
2,80
μC
Interner Gatewiderstand
internal gate resistor
TY = 25°C
Ríòú
2,5
Eingangskapazitt
input capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Cítù
21,0
nF
Rückwirkungskapazitt
reverse transfer capacitance
f = 1 MHz, TY = 25°C, V = 25 V, V = 0 V
Ctù
0,85
nF
Kollektor-Emitter Reststrom
collector-emitter cut-off current
V = 1200 V, V = 0 V, TY = 25°C
I
5,0
mA
Gate-Emitter Reststrom
gate-emitter leakage current
V = 0 V, V = 20 V, TY = 25°C
I
400
nA
Einschaltverzgerungszeit (ind. Last)
turn-on delay time (inductive load)
I = 300 A, V = 600 V
V = ±15 V
Róò = 2,4
tá óò
0,25
0,30
μs
μs
TY = 25°C
TY = 125°C
Anstiegszeit (induktive Last)
rise time (inductive load)
I = 300 A, V = 600 V
V = ±15 V
Róò = 2,4
t
0,09
0,10
μs
μs
TY = 25°C
TY = 125°C
Abschaltverzgerungszeit (ind. Last)
turn-off delay time (inductive load)
I = 300 A, V = 600 V
V = ±15 V
Ró = 2,4
tá ó
0,55
0,65
μs
μs
TY = 25°C
TY = 125°C
Fallzeit (induktive Last)
fall time (inductive load)
I = 300 A, V = 600 V
V = ±15 V
Ró = 2,4
t
0,13
0,18
μs
μs
TY = 25°C
TY = 125°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I = 300 A, V = 600 V
V = ±15 V, L = 85 nH
Róò = 2,4
Eóò
25,0
mJ
mJ
TY = 25°C
TY = 125°C
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I = 300 A, V = 600 V
V = ±15 V, L = 85 nH
Ró = 2,4
44,0
mJ
mJ
TY = 25°C
TY = 125°C
Kurzschluverhalten
SC data
t ù 10 μs, V ù 15 V
TY = 125°C, V = 900 V, Vèà = V -Lù ·di/dt
I
1200
A
Innerer Wrmewiderstand
thermal resistance, junction to case
pro IGBT
per IGBT
Rúì
0,085 K/W
übergangs-Wrmewiderstand
thermal resistance, case to heatsink
pro IGBT / per IGBT
eèùút = 1 W/(m·K) / etèùt = 1 W/(m·K)
Rúì
0,016
K/W
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