參數(shù)資料
型號(hào)： FZ100A06KL
英文描述： TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 100A I(C)
中文描述： 晶體管| IGBT功率模塊|獨(dú)立| 600V的五（巴西）國(guó)際消費(fèi)電子展| 100號(hào)A一（c）
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 116K
代理商： FZ100A06KL
Technische Information / Technical Information
FZ 1000 R 25 KF1
IGBT-Module
IGBT-Modules
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= 1000A, V
CE
= 1200V
V
GE
= ±15V, R
G
= 1,3
, C
GE
=136nF, T
vj
= 25°C,
t
d,on
-
1,4
-
μs
V
GE
= ±15V, R
G
= 1,3
, C
GE
=136nF, T
vj
= 125°C,
-
1,5
-
μs
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 1000A, V
CE
= 1200V
V
GE
= ±15V, R
G
= 1,3
, C
GE
=136nF, T
vj
= 25°C,
t
r
-
0,25
-
μs
V
GE
= ±15V, R
G
= 1,3
, C
GE
=136nF, T
vj
= 125°C,
-
0,25
-
μs
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
I
C
= 1000A, V
CE
= 1200V
V
GE
= ±15V, R
G
= 2,7
, C
GE
=136nF, T
vj
= 25°C,
t
d,off
-
2,2
-
μs
V
GE
= ±15V, R
G
= 2,7
, C
GE
=136nF, T
vj
= 125°C,
-
2,2
-
μs
Fallzeit (induktive Last)
fall time (inductive load)
I
C
= 1000A, V
CE
= 1200V
V
GE
= ±15V, R
G
= 2,7
, C
GE
=136nF, T
vj
= 25°C,
t
f
-
0,2
-
μs
V
GE
= ±15V, R
G
= 2,7
, C
GE
=136nF, T
vj
= 125°C,
-
0,2
-
μs
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I
C
= 1000A, V
CE
= 1200V, V
GE
= ±15V
R
G
= 1,3
, C
GE
=136nF, T
vj
= 125°C , L
S
= 60nH
E
on
-
1400
-
mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I
C
= 1000A, V
CE
= 1200V, V
GE
= ±15V
R
G
= 2,7
, C
GE
=136nF, T
vj
= 125°C , L
S
= 60nH
E
off
-
1000
-
mWs
Kurzschluverhalten
SC Data
t
P
≤
10μsec, V
GE
≤
15V
T
Vj
≤
125°C, V
CC
=1200V, V
CEmax
=V
CES
-L
sCE
·dI/dt
I
SC
-
4000
-
A
Modulinduktivitt
stray inductance module
L
sCE
-
12
-
nH
Modulleitungswiderstand, Anschlüsse - Chip
module lead resistance, terminals - chip
R
CC′+EE′
-
0,19
-
m
Diode / Diode
min.
typ.
max.
Durchlaspannung
forward voltage
I
F
= 1000A, V
GE
= 0V, T
vj
= 25°C
V
F
-
2,3
2,7
V
I
F
= 1000A, V
GE
= 0V, T
vj
= 125°C
-
2,3
2,7
V
Rückstromspitze
peak reverse recovery current
I
F
= 1000A, - di
F
/dt = 4000A/μs
V
R
= 1200V, VGE = -10V, T
vj
= 25°C
I
RM
-
950
-
A
V
R
= 1200V, VGE = -10V, T
vj
= 125°C
-
1000
-
A
Sperrverzgerungsladung
recovered charge
I
F
= 1000A, - di
F
/dt = 4000A/μs
V
R
= 1200V, VGE = -10V, T
vj
= 25°C
Q
r
-
520
-
μAs
V
R
= 1200V, VGE = -10V, T
vj
= 125°C
-
900
-
μAs
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 1000A, - di
F
/dt = 4000A/μs
V
R
= 1200V, VGE = -10V, T
vj
= 25°C
E
rec
-
340
-
mWs
V
R
= 1200V, VGE = -10V, T
vj
= 125°C
-
650
-
mWs
2
FZ101@3.xls
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