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參數(shù)資料
| 型號(hào)： | FY8BCH-02F |
| 英文描述： | FY8BCH-02F Datasheet 42K/MAR.20.03 |
| 中文描述： | FY8BCH - 02F數(shù)據(jù)42K/MAR.20.03 |
| 文件頁(yè)數(shù)： | 3/3頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | FY8BCH-02F |
MITSUBISHI Nch POWER MOSFET
FY8BCH-02F
HIGH-SPEED SWITCHING USE
PRELIMINARY
Some parametric limits are subject to change.
Sep. 2000
ELECTRICAL CHARACTERISTICS
(Tch = 25
°
C)
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
r
DS (ON)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-a)
t
rr
V
V
μ
A
mA
V
m
m
V
S
pF
pF
pF
ns
ns
ns
ns
V
°
C/W
ns
20
±
10
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.9
13
17
0.104
—
1800
—
—
—
—
—
—
0.85
—
50
—
—
±
10
0.1
1.5
16
22
0.128
—
—
—
—
—
—
—
—
1.1
—
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
Unit
Parameter
Test conditions
Limits
Typ.
Min.
Max.
I
D
= 1mA, V
GS
= 0V
I
G
=
±
100
μ
A, V
DS
= 0V
V
GS
=
±
10V, V
DS
= 0V
V
DS
= 20V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 8A, V
GS
= 4V
I
D
= 4A, V
GS
= 2.5V
I
D
= 8A, V
GS
= 4V
I
D
= 8A, V
DS
= 10V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
V
DD
= 10V, I
D
= 4A, V
GS
= 4V, R
GEN
= R
GS
= 50
I
S
= 1.5A, V
GS
= 0V
Channel to ambient
I
S
= 1.5A, dis/dt = –50A/
μ
s
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