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參數(shù)資料
| 型號(hào)： | FXT560 |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 55K |
| 代理商： | FXT560 |
July 1998
FXT560 / FXT560A
NPN Low Saturation Transistor
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous.
Absolute Maximum Ratings*
T
A = 25°C unless otherwise noted
°C
-55 to +150
Operating and Storage Junction Temperature Range
T
J,
T
stg
A
3
Collector Current - Continuous
I
C
V
5
Emitter-Base Voltage
V
EBO
V
80
Collector-Base Voltage
V
CBO
V
60
Collector-Emitter Voltage
V
CEO
Units
FXT560/FXT560A
Parameter
Symbol
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
T
A = 25°C unless otherwise noted
°C/W
125
Thermal Resistance, Junction to Ambient
R
θ
JC
°C/W
50
Thermal Resistance, Junction to Case
R
θ
JC
W
1
Total Device Dissipation
P
D
FXT560/FXT560A
Units
Max
Characteristic
Symbol
Page 1 of 2
fxt560.lwpPrNA 7/10/98 revB
1998 Fairchild Semiconductor Corporation
C
TO-226
F
Discrete Power & Signal
Technologies
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PDF描述 |
|---|---|
| FXT560A | |
| FXT660 | |
| FXT660A | |
| FXT601BSM | TRANSISTOR | BJT | DARLINGTON | NPN | 160V V(BR)CEO | 1A I(C) | SO |
| FXT603SM | TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 1A I(C) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FXT560A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| FXT6.1-SLI-X | 制造商:Yageo / Ferroxcube 功能描述: |
| FXT601B | 功能描述:達(dá)林頓晶體管 - RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| FXT601BSM | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 160V V(BR)CEO | 1A I(C) | SO |
| FXT601BSTOA | 功能描述:達(dá)林頓晶體管 - RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
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