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參數(shù)資料
| 型號： | FX6ASJ-03-T13 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | High-Speed Switching Use Pch Power MOS FET |
| 中文描述： | 高速開關使用溝道功率MOS FET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 105K |
| 代理商： | FX6ASJ-03-T13 |
Rev.1.00, Aug.20.2004, page 1 of 6
FX6ASJ-03
High-Speed Switching Use
Pch Power MOS FET
REJ03G0247-0100
Rev.1.00
Aug.20.2004
Features
Drive voltage : 4 V
V
DSS
: – 30 V
r
DS(ON) (max)
: 0.29
I
D
: – 6 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 40 ns
Outline
MP-3A
1
3
2
4
1. Gate
2. Drain
3. Source
4. Drain
1
2, 4
3
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
Tch
Tstg
—
Ratings
–30
±
20
–6
–24
–6
–6
–24
20
– 55 to +150
– 55 to +150
0.32
Unit
V
V
A
A
A
A
A
W
°
C
°
C
g
Conditions
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Mass
V
GS
= 0 V
V
DS
= 0 V
L = 30
μ
H
Typical value
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PDF描述 |
|---|---|
| FX6ASJ-03 | High-Speed Switching Use Pch Power MOS FET |
| FX6ASJ-06 | ER 3C 3#16 PIN RECP LINE |
| FX6ASJ-06 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
| FX6ASJ-2 | HIGH-SPEED SWITCHING USE |
| FX6ASJ-2 | Pch POWER MOSFET HIGH-SPEED SWITCHING USE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| FX6ASJ06 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 6A I(D) | TO-252AA |
| FX6ASJ-06 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET |
| FX6ASJ-06-T13 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET |
| FX6ASJ2 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-252AA |
| FX6ASJ-2 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:HIGH-SPEED SWITCHING USE |
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