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參數(shù)資料
| 型號： | FX20ASJ-03 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | HIGH-SPEED SWITCHING USE |
| 中文描述： | 高速開關(guān)使用 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大小： | 44K |
| 代理商： | FX20ASJ-03 |
PRELIMINARY
Notice: This is not a final specification.
Some parametric limits are subject to change.
Jan.1999
10
2
2
3
5
7
10
3
2
3
5
7
10
4
2
3
5
7
–10
0
–3 –5–7
–2
–10
1
–3 –5–7
2
–2
–10
2
–3 –5–7
–2 –3
10
0
10
1
2
3
5
7
10
2
2
3
5
7
–10
0
–5–7
–2
–10
1
–3 –5–7
10
3
7
5
2
3
–2
–3 –5
–10
2
–3 –5–7
–2
–10
0
–3
–5 –7
–2 –3
–5 –7
–10
1
–2 –3
10
–1
10
0
2
3
4
5
7
10
1
2
3
4
5
7
T
C
= 25°C75°C125°C
V
DS
= –5V
Pulse Test
0
–4
–8
–12
–16
–20
0
–2
–4
–6
–8
–10
Tc = 25°C
V
DS
= –10V
Pulse Test
0
–1.0
–2.0
–3.0
–4.0
–5.0
0
–2
–4
–6
–8
–10
Tc = 25°C
Pulse Test
–5A
–10A
I
D
=
–20A
Ciss
Coss
Crss
Tch = 25°C
f = 1MH
Z
V
GS
= 0V
0
–10
–1
–2
0.08
0.16
0.24
0.32
0.40
–10
0
–3
–5 –7
–2
–10
1
–3 –5–7
–2
–10
2
–3
–5 –7
–10V
Tc = 25°C
Pulse Test
V
GS
= –4V
t
d(off)
t
d(on)
t
r
Tch = 25°C
V
GS
= –10V
V
DD
= –15V
R
GEN
= R
GS
= 50
t
f
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
V
D
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
D
R
D
)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
D
D
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
F
A
y
f
(
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
C
C
S
MITSUBISHI Pch POWER MOSFET
FX20ASJ-03
HIGH-SPEED SWITCHING USE
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| FX20ASJ-03F | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:High-Speed Switching Use Pch Power MOS FET |
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| FX20ASJ-06 | 制造商:Renesas Electronics Corporation 功能描述:TRANS MOSFET P-CH 60V 20A 3PIN MP-3A - Rail/Tube |
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