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參數(shù)資料
| 型號： | FW360 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 運動控制電子 |
| 英文描述： | BRUSH DC MOTOR CONTROLLER, PDSO8 |
| 封裝： | SOP-8 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 49K |
| 代理商： | FW360 |
FW360
No.7556-1/6
Features
The FW360 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching, thereby enabling high-density mounting.
Excellent ON-resistance characteristic.
4V drive.
Best suited for motor drive application.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
100
--100
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
2
--2
A
Drain Current (PW
≤100ms)
ID
duty cycle
≤1%
5
--5
A
Drain Current (PW
≤10s)
IDP
duty cycle
≤1%
8
--8
A
Allowable Power Dissipation
PD
Mounted on a ceramic board
1.4
1.8
W
(1200mm2!0.8mm) 1unit, PW
≤10s
Total Dissipation
PT
Mounted on a ceramic board
2.0
W
(1200mm2!0.8mm), PW
≤10s
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
100
V
Zero-Gate Voltage Drain Current
IDSS
VDS=100V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=1A
1.8
3
S
Marking : W360
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7556A
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
62005PA MS IM TB-00001493 / 31504 TS IM TA-100617
FW360
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
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