參數(shù)資料
型號(hào)： HA16114PJ
廠商： Hitachi,Ltd.
元件分類(lèi)： 基準(zhǔn)電壓源/電流源
英文描述： RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述： 抗輻射高效，5安培開(kāi)關(guān)穩(wěn)壓器
文件頁(yè)數(shù)： 15/38頁(yè)
文件大?。?/td> 275K
代理商： HA16114PJ
HA16114P/PJ/FP/FPJ, HA16120FP/FPJ
15
6. Usage of ON/
OFF
Pin
This pin is used for the following purposes:
To shut down the IC while its input power remains on (power management)
To externally alter the UVL release voltage
With the timer (TM) pin, to operate in intermittent mode during overcurrent (see next section)
6.1 Shutdown by ON/
OFF
Pin Control
The IC can be shut down safely by bringing the voltage at the ON/
OFF
pin below about 0.7 V (the internal
VBE value). This feature can be used in power supply systems to save power. When shut down, the
HA16114 draws a maximum current (I
OFF
) of 10
μ
A, while the HA16120 draws a maximum 150
μ
A. The
ON/
OFF
pin sinks 290
μ
A (Typ) at 5 V, so it can be driven by TTL and other logic ICs. If intermittent
mode will also be employed, use a logic IC with an open-collector or open-drain output.
HA16114,
HA16120
GND
V
IN
I
IN
TM
ON/OFF
V
IN
Vref
output
To other circuitry
Vref
reference
To latch
R
B
R
A
C
ON/OFF
+
Switch
10 k
3V
BE
Q
1
Q
3
Off
On
External logic IC
On/off hysteresis circuit
Q
2
Figure 6.1 Shutdown by ON/
OFF
Pin Control
6.2 Adjustment of UVL Voltages (when not using intermittent mode)
These ICs permit external adjustment of the undervoltage lockout voltages. The adjustment is made by
changing the undervoltage lockout thresholds V
TH
and V
TL
relative to V
IN
, using the relationships shown in
the accompanying diagrams.
When the IC is powered up, transistor Q
3
is off, so V
ON
is 2V
BE
, or about 1.4 V. Connection of resistors R
C
and R
D
in the diagram makes undervoltage lockout release at:
V
IN
= 1.4 V
×
R
C
+ R
D
R
D
This V
IN
is the supply voltage at which undervoltage lockout is released. At the release point Vref is still
below 2.5 V. To obtain Vref = 2.5 V, V
IN
must be at least about 4.3 V.
Since V
ON/
OFF
operates in relation to the base-emitter voltage of internal transistors, V
ON
has a temperature
coefficient of approximately –4 mV/°C. Keep this in mind when designing the power supply unit.
When undervoltage lockout and intermittent mode are both used, the intermittent-mode time constant is
shortened, so the constants of external components may have to be altered.
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