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參數(shù)資料
| 型號： | FW241 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Swiching Applications |
| 中文描述： | 超高速交換技術(shù)的應(yīng)用 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 30K |
| 代理商： | FW241 |
FW241
No.6939-1/4
Features
This composite device allows high density mounting by
incorporating two MOSFET chips in one package that
feature low on-resistance, ultrahigh switching speed, and
drive voltage of 4.5V.
The two chips have near characteristics, and especially
suited for HDD.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6939
FW241
Package Dimensions
unit : mm
2129
[FW241]
42501 TS IM TA-3130
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : SOP8
1
4
5
8
4
0
6
0.2
5.0
0.595
1.27
1
0
1
0.43
Specifications
Absolute Maximum Ratings
at Ta=25
°
C
Parameter
Symbol
VDSS
VGSS
ID
IDP
Conditions
Ratings
Unit
V
V
A
A
W
W
°
C
°
C
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
30
±
20
3.5
14
1.4
2.0
150
PW
≤
10
μ
s, duty cycle
≤
1%
Mounted on a ceramic board (2000mm
2
0.8mm)1unit
Tc=25
°
C
Allowable Power Dissipation
PD
Channel Temperature
Storage Temperature
Tch
Tstg
--55 to +150
Electrical Characteristics
at Ta=25
°
C
Ratings
typ
Parameter
Symbol
Conditions
min
max
Unit
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Forward Transfer Admittance
Marking : W241
V(BR)DSS
IDSS
IGSS
VGS(th)
yfs
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=
±
16V, VDS=0
VDS=VGS, ID=250
μ
A
VDS=10V, ID=3.5A
30
V
μ
A
μ
A
V
S
1
±
10
2.5
1.2
3.7
5.3
Continued on next page.
Ultrahigh-Speed Swiching Applications
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| FW243 | DC/DC Converter Applications |
| FW245 | DC / DC Converter Applications |
| FW250 | N-Channl Silicon MOSFET Ultrahigh-Speed Switching Applications |
| FW257 | N CHANNEL MOS SILICON TRANSISTOR |
| FW261 | N CHANNEL MOS SILICON TRANSISTOR |
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|---|---|
| FW241-TL-E | 制造商:SANYO 功能描述:N+N 30V 3.5A 0.084 SOP8 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NN CH 30V 3.5A SOT96 制造商:Sanyo 功能描述:0 |
| FW243 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC/DC Converter Applications |
| FW245 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
| FW248 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device |
| FW248-TL-E | 功能描述:MOSFET N-CH DUAL 45V 6A 8-SOP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:- 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR |
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