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參數(shù)資料
| 型號： | FT1211DH |
| 英文描述： | High Commutation TRIACs |
| 中文描述： | 高換向可控硅 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 144K |
| 代理商： | FT1211DH |
FT12...H
HIGH COMMUTATION TRIAC
Jun - 03
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
Threshold Voltage
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
(1)
I
DRM
V
D
= 12 V
DC
, R
L
= 30
, T
j
= 25 oC
V
D
= V
DRM
,
V
R
= V
RRM
,
T
j
= 125 oC
T
j
= 125 oC
mA
mA
μA
V
m
V
V
V
mA
mA
1
5
0.85
35
1.55
1.3
0.2
1.4
60
V/μs
A/ms
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MAX
MIN
MIN
MIN
MIN
/I
RRM
V
TM
(2)
V
GT
V
GD
I
H
(2)
I
L
dv / dt
(2)
R
th(j-a)
Thermal Resistance
Junction-Ambient
T
j
= 125 oC
T
j
= 25 oC
I
T
= 17 Amp, tp = 380 μs, T
j
= 25 oC
V
D
= 12 V
DC
, R
L
= 30
, T
j
= 25 oC
V
D
= V
DRM
, R
L
= 3.3K
, T
j
= 125 oC
I
T
= 100 mA
, Gate open, T
j
= 25 oC
I
G
= 1.2 I
GT
,
T
j
= 25 oC
V
D
= 0.67 x V
DRM
, Gate open
T
j
= 125 oC
(dv/dt)c= 0.1 V/μs T
j
= 125 oC
(dv/dt)c= 10 V/μs T
j
= 125 oC
without snubber Tj = 125 oC
Quadrant
Q1÷Q3
Q1÷Q3
Q1÷Q3
Q1,Q3
Q2
oC/W
oC/W
R
GK
= 1K
,
16
50
50
70
80
1000
-
-
12
14
35
35
50
60
500
-
-
6.5
(1) Minimum I
GT
is guaranted at 5% of I
GT
max.
(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.
R
th(j-c)
Thermal Resistance
Junction-Case
for AC 360o conduction angle
(dI/dt)c
(2)
Critical Rate of Current Rise
V
to
(2)
R
d
(2)
PART NUMBER INFORMATION
FAGOR
TRIAC
CURRENT
CASE
VOLTAGE
SENSITIVITY
F
T
12
14
B
H
00
FORMING
TU
PACKAGING
11
25
25
40
50
200
-
-
5.3
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