參數(shù)資料
型號(hào): FT0102BN
英文描述: Logic Level TRIACs
中文描述: 邏輯電平雙向可控硅
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 143K
代理商: FT0102BN
Mar - 03
PART NUMBER INFORMATION
FAGOR
TRIAC
CURRENT
CASE
VOLTAGE
SENSITIVITY
F
T
01
05
B
N
00
FORMING
RB
PACKAGING
FT01...N
SURFACE MOUNT TRIAC
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
Threshold Voltage
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
PARAMETER
CONDITIONS
SENSITIVITY
Unit
SYMBOL
I
GT
I
DRM
V
D
= 12 V
DC
, R
L
= 30
, T
j
= 25 oC
mA
0.5
5
0.95
400
1.5
1.3
0.2
10
10
20
20
1
60
150
mA
μA
V
m
V
V
V
mA
mA
V/μs
V/μs
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MAX
MIN
MIN
/I
RRM
V
TM
*
V
GT
V
GD
I
H
*
I
L
dv / dt*
R
th(j-a)
Thermal Resistance
Junction-Ambient
V
D
= V
DRM
,
V
R
= V
RRM
,
T
j
= 125 oC
T
j
= 125 oC
T
j
= 125 oC
T
j
= 25 oC
I
T
= 1.1 Amp, tp = 380 μs, T
j
= 25 oC
V
D
= 12 V
DC
, R
L
= 30
, T
j
= 25 oC
V
D
= V
DRM
, R
L
= 3.3K
, T
j
= 125 oC
I
T
= 50 mA
T
j
= 25 oC
I
G
= 1.2 I
GT
,
T
j
= 25 oC
V
D
= 0.67 x V
DRM
, Gate open
T
j
= 125 oC
Quadrant
Q1÷Q3
Q4
Q1÷Q4
Q1÷Q4
Q1,Q3,Q4
Q2
oC/W
oC/W
(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.
R
th(j-l)
Thermal Resistance
Junction-Leads for AC
(dv/dt)c*
(di/dt)c= 0.44 A/ms T
j
= 110 oC
V
to
R
d
07
5
7
05
5
5
03
3
5
02
3
3
09
10
10
7
7
14
10
0.5
25
25
50
2
04
5
Critidal rise rate of
commutating off-state
Voltage
10
25
25
25
50
200
4.4
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