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參數(shù)資料
| 型號： | FSYC163R |
| 廠商： | Intersil Corporation |
| 英文描述： | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| 中文描述： | 抗輻射，抗SEGR N溝道功率MOSFET |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 61K |
| 代理商： | FSYC163R |
4-5
FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 10. UNCLAMPED ENERGY WAVEFORMS
FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT
FIGURE 12. RESISTIVE SWITCHING WAVEFORMS
Typical Performance Curves
Unless Otherwise Specified
(Continued)
100
10
0.01
0.1
1
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
10
STARTING T
J
= 25
o
C
STARTING T
J
= 150
o
C
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
IF R = 0
1000
1
t
P
V
GS
≤
20V
L
+
-
V
DS
V
DD
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
50
50
50V-150V
I
AS
+
-
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
CURRENT
TRANSFORMER
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
V
DS
DUT
R
GS
0V
V
GS
= 12V
V
DD
R
L
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
t
ON
FSYC163D, FSYC163R
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| FSYC163R1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC163R3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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| FSYC163D1 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FSYC163R1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC163R3 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC163R4 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC260D | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
| FSYC260D1 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs |
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