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  • 參數(shù)資料
    型號: FSX027WF
    廠商: SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
    英文描述: General Purpose GaAs FET
    中文描述: 通用砷化鎵場效應(yīng)管
    文件頁數(shù): 4/4頁
    文件大小: 108K
    代理商: FSX027WF
    FSX027WF
    General Purpose GaAs FET
    For further information please contact:
    FUJITSU COMPOUND SEMICONDUCTOR, INC.
    2355 Zanker Rd.
    San Jose, CA 95131-1138, U.S.A.
    Phone: (408) 232-9500
    FAX: (408) 428-9111
    www.fcsi.fujitsu.com
    FUJITSU MICROELECTRONICS EUROPE, GmbH
    Quantum Devices Division
    Network House
    Norreys Drive
    Maidenhead, Berkshire SL6 4FJ
    Phone:+44 (0)1628 504800
    FAX:+44 (0)1628 504888
    Fujitsu Limited reserves the right to change products and specifications without notice.
    The information does not convey any license under rights of Fujitsu Limited or others.
    1998 FUJITSU COMPOUND SEMICONDUCTOR, INC.
    Printed in U.S.A. FCSI0598M200
    Fujitsu Compound Semiconductor Products contain
    gallium arsenide
    (GaAs)
    which can be hazardous to the human body and the environment.
    For safety, observe the following procedures:
    CAUTION
    Do not put these products into the mouth.
    Do not alter the form of this product into a gas, powder, or liquid
    through burning, crushing, or chemical processing as these by-products
    are dangerous to the human body if inhaled, ingested, or swallowed.
    Observe government laws and company regulations when discarding this
    product. This product must be discarded in accordance with methods
    specified by applicable hazardous waste procedures.
    1
    (
    1
    (
    0
    ±
    0
    (
    2
    (
    2
    ±
    0
    (
    0.6
    (0.024)
    0.1
    ±
    0.05
    (0.004)
    2.5
    (0.098)
    6.1
    ±
    0.1
    (0.240)
    8.5
    ±
    0.2
    (0.335)
    2-
    1.6
    ±
    0.01
    (0.063)
    2
    3
    4
    1
    1: Gate
    2: Source (Flange)
    3: Drain
    4: Source (Flange)
    Unit: mm (Inches)
    Case Style "WF"
    Metal-Ceramic Hermetic Package
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